D5N50 Datasheet | Specifications & PDF Download

AOD5N50 500V,5A N-Channel MOSFET General Description Product Summary The AOD5N50 is fabricated using an advanced high voltage MOSFET process that i

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FMD5N50E5 Silicon N-Channel Power MOSFET General Description： FMD5N50E5, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned p

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5A, 500V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s pr

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast re

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CMD5N50/CMU5N50 General Description These N-Channel enhancement mode power field effect transistors are produced using advanced technology which has

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FQD5N50C / FQU5N50C FQD5N50C / FQU5N50C 500V N-Channel MOSFET October 2008 QFET® General Description These N-Channel enhancement mode power field e

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AOD5N50 500V,5A N-Channel MOSFET General Description The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deli

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FDD5N50F N-Channel MOSFET, FRFET FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A • Low g

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn CM4D5N50 N- VDMOS * ： ◆ 、 * ： ◆ , ◆ ◆100% * ： ◆

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isc N-Channel MOSFET Transistor AOD5N50 FEATURES ·Drain Current –ID= 5.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Re

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FDD5N50NZF — N-Channel UniFETTM FRFET® MOSFET FDD5N50NZF N-Channel UniFETTM FRFET® MOSFET 500 V, 3.7 A, 1.75 Ω November 2013 Features • RDS(on) = 1

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FDD5N50U — N-Channel UniFETTM Ultra FRFETTM MOSFET FDD5N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 3 A, 2.0 Ω November 2013 Features • RDS(

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MDD5N50 N-channel MOSFET 500V MDD5N50Z N-Channel MOSFET 500V, 4.4 A, 1.4Ω General Description The MDD5N50Z uses advanced Magnachip’s MOSFET Technolo

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast re

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FDD5N50FTM_WS — N-Channel UniFETTM FRFET® MOSFET February 2015 FDD5N50FTM_WS N-Channel UniFETTM FRFET® MOSFET 500 V, 3.5 A, 1.55 Ω Features • RDS(o

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FDD5N50NZ — N-Channel UniFETTM II MOSFET FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5 Ω Features • RDS(on) = 1.38 Ω (Typ.) @ VGS = 10 V, ID

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FDD5N50 — N-Channel UniFETTM MOSFET November 2013 FDD5N50 Features •R DS(on) = N-Channel UniFETTM MOSFET 500 V, 4 A, 1.4 Ω Description UniFETTM MOS

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MDD5N50 N-Channel MOSFET 500V MDD5N50 N-Channel MOSFET 500V, 4.4 A, 1.4Ω General Description The MDD5N50 uses advanced Magnachip’s MOSFET Technology

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FDD5N50 — N-Channel UniFETTM MOSFET FDD5N50 N-Channel UniFETTM MOSFET 500 V, 4 A, 1.4 Ω Features • RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2 A • L

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SLU5N50S / SLD5N50S SLU5N50S / SLD5N50S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar s

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