D60 Datasheet | Specifications & PDF Download

Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID R

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AD6025GP SERIES Specifications(Nominal) Frame size (mm) AD0612HB-A71GP(P) AD0612UB-A71GP(P) AD0612XB-A71GP(P) AD0612VB-A71GP(P) AD0612EB-A71GP(PCU) A

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N-ch and P-ch Fast Switching MOSFET DESCRIPTION The is the highest performance trench N-Ch and P-Ch MOSFETs With extreme high cell density,which provi

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PbFreeProduct NCE60TD60BP,NCE60TD60BT 600V, 60A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (F

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FEATURES Ultralow input noise at maximum gain 0.80 nV/√Hz, 3.0 pA/√Hz 2 independent linear-in-dB channels Absolute gain range per channel programmable

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Features • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -55°C to +125°C Extended Operating Temperature Range • Logi

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isc Silicon NPN Power Transistor INCHANGE Semiconductor KTD600K DESCRIPTION ·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Volta

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GD60MPS17H 1700V 60A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Enhanced Surge and Aval

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FEATURES 2 channels with independent gain control Linear in dB gain response 2 gain ranges AD600: 0 dB to 40 dB AD602: –10 dB to +30 dB Accurate absol

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www.DataSheet4U.com a FEATURES Two Independent Linear-in-dB Channels Input Noise at Maximum Gain: 1.8 nV/ √Hz , 2.7 pA/√Hz Bandwidth: 40 MHz (–3 dB)

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Silicon N-Channel Power MOSFET HPD600R700DN ○R General Description： HPD600R700DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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TRIAC( Surface Mount Device / Non-isolated) TMG5D60D Triac TMG5D60D is designed for full wave AC control applications. It can be used as an ON/OFF fu

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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Green Product SamHop Microelectronics Corp. STU/D600S Aug 25,2006 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V FEAT

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MMD60R900P Datasheet MMD60R900P 600V 0.9Ω N-channel MOSFET  Description MMD60R900P is power MOSFET using magnachip’s advanced super junction technol

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ESF75D60U/UC/FB ESF75D60U/UC/FB Ultra-Fast Recovery Diode Features  Repetitive Reverse Voltage : VRRM = 600V  Forward Voltage Drop : VF(typ.) = 1.

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WSTD6050AN-RL Product Description High-side driver with current sense analog feedback for 24V automotive applications WSTD6050AN-RL ，40mΩ，DFN9×6-14L，

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NPN General Purpose Amplifier Transistors Surface Mount MSD601-RT1G, NSVMSD601-RT1G Features • NSV Prefix for Automotive and Other Applications Requi

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www.vishay.com TEMD6010FX01 Vishay Semiconductors Ambient Light Sensor 18527-1 DESCRIPTION TEMD6010FX01 ambient light sensor is a PIN photodiode wi

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