D60 Datasheet | Specifications & PDF Download

N-ch and P-ch Fast Switching MOSFET DESCRIPTION The is the highest performance trench N-Ch and P-Ch MOSFETs With extreme high cell density,which provi

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Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID R

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-30A, -60V P-CHANNEL MOSFET GENERAL DESCRIPTION The SFD6003PT uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch

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IPDD60R170CFD7 MOSFET 600V CoolMOS™ CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordin

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INTEGRATED CIRCUITS DIVISION IXD_609 9-Ampere Low-Side Ultrafast MOSFET Drivers Features • 9A Peak Source/Sink Drive Current • Wide Operating Voltag

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PbFreeProduct NCE60TD60BP,NCE60TD60BT 600V, 60A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (F

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INTEGRATED CIRCUITS DIVISION Features • 4A Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating

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AD6025GP SERIES Specifications(Nominal) Frame size (mm) AD0612HB-A71GP(P) AD0612UB-A71GP(P) AD0612XB-A71GP(P) AD0612VB-A71GP(P) AD0612EB-A71GP(PCU) A

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GD600CUY120C6S STARPOWER SEMICONDUCTOR GD600CUY120C6S 1200V/600A chopper in one-package General Description STARPOWER IGBT Power Module provides ultra

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·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■APPLICATION: Low Frequency Power Amplifier Applications. ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter

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HD60N03_HU60N03 Nov 2009 HD60N03 / HU60N03 30V N-Channel MOSFET BVDSS = 30 V RDS(on) = 9mΩ ID = 60 A FEATURES  Originative New Design  Superior

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FEATURES Ultralow input noise at maximum gain 0.80 nV/√Hz, 3.0 pA/√Hz 2 independent linear-in-dB channels Absolute gain range per channel programmable

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Pb Free Product NCE15TD60D/NCE15TD60/NCE15TD60F 600V, 15A, Trench FS II IGBT General Description: Using NCE's proprietary trench design and advanced

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MSD601−RT1, MSD601−ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features • Pb−Free Packages are Available http://on

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N-Channel Trench Power MOSFET General Description The CSD60N70 is N-channel MOS Field Effect Transistor designed for high current switching applicatio

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