DOC. NO. 04CB-000325 PART NO. 0401-001004 0403-00.
Advanced Power Technology
18
APTGF100DA120T - Boost chopper NPT IGBT
APTGF100DA120T Boost chopper NPT IGBT Power Module VBUS VBUS SENSE NTC2 VCES = 1200V IC = 100A @ Tc = 80°C Application · AC and DC motor control · Sw.
SGS-Ates
17
TDA1200 - FM-IF Radio System
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.
Rohm
7
DA120 - (DA1xx) Diode / High Speed Switching / Surface Mount
DOC. NO. 04CB-000325 PART NO. 0401-001004 0403-001004 w w a D . w S a t m o DA112.c DA115 DA113 U DA116 DA114 DA118 4 t e e h DA119 DA12O DA121.
Microsemi
7
MSC015SDA120B - Zero Recovery Silicon Carbide Schottky Diode
MSC015SDA120B Datasheet Zero Recovery Silicon Carbide Schottky Diode Final May 2018 Zero Recovery Silicon Carbide Schottky Diode Contents 1 Revision .
Vishay Siliconix
6
GB75DA120UP - Insulated Gate Bipolar Transistor
www.DataSheet.co.kr GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A FEATURES • NPT Generation V IGBT tech.
Laird
6
DA1206B601R-10 - Ferrite EMI Chip Beads
Ferrite EMI Chip Beads Features: • Up to 10 Amps (I MAX) continuous operating capability • Low DCR • Vibration Resistant • Rugged monolithic construct.
Diodes Incorporated
6
2DA1201Y - 120V PNP SILICON TRANSISTOR
Features • BVCEO > -120V • Max Continuous Current IC = -0.8A • High Gain Holds up hFE ≥ 120 @ IC = -100mA • Totally Lead-Free & Fully RoHS compliant (.
Microsemi
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MSC010SDA120B - Zero Recovery Silicon Carbide Schottky Diode
MSC010SDA120B Datasheet Zero Recovery Silicon Carbide Schottky Diode Final June 2018 Zero Recovery Silicon Carbide Schottky Diode Contents 1 Revision.
Microsemi Corporation
4
APTGT200DA120G - Boost chopper Fast Trench Field Stop IGBT Power Module
APTGT200DA120G Boost chopper Fast Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS VCES = 1200V IC = 200A @ Tc = 80°C Application • AC.
Advanced Power Technology
4
APTGT25DA120D1 - Boost chopper Trench IGBT Power Module
APTGT25DA120D1 Trench IGBT Power Module 3 Boost chopper ® www.datasheet4u.com VCES = 1200V IC = 25A @ Tc = 80°C Application • AC and DC motor contr.
Advanced Power Technology
3
APTGF25DDA120T3 - Dual Boost Chopper NPT IGBT Power Module
APTGF25DDA120T3 Dual Boost Chopper NPT IGBT Power Module 13 14 www.DataSheet4U.com VCES = 1200V IC = 25A @ Tc = 80°C Application • AC and DC motor c.
Advanced Power Technology
3
APTGU30DDA120T3 - Dual Boost chopper
APTGU30DDA120T3 www.DataSheet4U.com Dual Boost chopper PT IGBT Power Module 13 14 VCES = 1200V IC = 30A @ Tc = 80°C Application • AC and DC motor co.
Microsemi Corporation
3
APTGT400DA120D3G - IGBT Power Module
APTGT400DA120D3G Boost chopper Trench + Field Stop IGBT Power Module www.DataSheet4U.net VCES = 1200V IC = 400A @ Tc = 80°C 3 Application • AC and .
Vishay Siliconix
3
GT100DA120U - Insulated Gate Bipolar Transistor
www.DataSheet.co.kr GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology tempe.
Fuji Electric
3
7MBP35VDA120-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 7MBP35VDA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 35A / IPM Features • Temperature .
Fuji Electric
3
7MBP100VDA120-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 7MBP100VDA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 100A / IPM Features • Temperatur.
Vishay
3
VS-GT80DA120U - IGBT
www.vishay.com VS-GT80DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 80 A SOT-227 PRIMARY CHARACTERISTICS VCES 12.
Microsemi
3
MSC2X31SDA120J - Dual Silicon Carbide Schottky Barrier Diodes
MSC2X31/30SDA120J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product l.
