DD50 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-

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CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0.

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3DD5023 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features 、；,，。 High br

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY 3DD5017 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»ú¿

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3DD5017 1. 3DD5017 NPN ，， 。： ● 、 ● ● ● ● ：TO-3P(H)IS 2. 15.5max 5.5max 3max Φ3.6 26.5max 4.5 2.1 ，Tamb= 25℃ - VCE0 650

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3DD5023 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features 、；,，。 High br

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Huajing Discrete Devices ○R Silicon NPN Bipolar Transistor for Low-frequency Amplification 3DD5011A9 1 Description： 3DD5011A9, silicon NPN low fr

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3DD5024 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features 、；,，。 High br

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R CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY 3DD5023P MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 6A 5 V(max) 1 μs(max

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5038 FOR LOW FREQUENCY 3DD5038 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»ú¿

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5044 FOR LOW FREQUENCY 3DD5044 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ý×Ö¡¢Ê ÐÊä³

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IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features • Built using the advantages and

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CASE-RATED BIPOLAR TRANSISTOR 3DD5024P FOR LOW FREQUENCY AMPLIFICATION R 3DD5024P MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500V 8.0 A 3.0V(max)

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5039 FOR LOW FREQUENCY 3DD5039 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»ú¿

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY 3DD5023 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»úÐ

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SDD50065SHD Dual 650V Silicon Carbide Schottky Diode - 1 KEY FEATURES VRRM 650V IF @ 125°C 50A BACKSIDE ISOLATION SMALL FOOTPRINT ZERO REVERSE RECOVE

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ReICU DC/DC CONVERTER Features Efficiency up to 85% 1500VDC Isolation Singl/Double output Continous short circuit protection Over load protection Wi

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5038P FOR LOW FREQUENCY R 3DD5038P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) Tf 1200

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032P FOR LOW FREQUENCY R 3DD5032P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500

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