DS4 Datasheet | Specifications & PDF Download

V-Data Synchronous DRAM VDS4616A4A 512K x 16 Bit x 2 Banks General Description The VDS4616A4A are two-bank Synchronous DRAMs organized as 524,288 wo

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A-Data Synchronous DRAM ADS4616A4A 512K x 16 Bit x 2 Banks General Description The ADS4616A4A are two-bank Synchronous DRAMs organized as 524,288 wo

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FDS4559 April 2002 FDS4559 60V Complementary PowerTrenchMOSFET General Description This complementary MOSFET device is produced using Fairchild’s a

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FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -

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PRELIMINARY DS4802 Low Voltage, Micro Power, High Performance, Rail-To-Rail Dual Op-Amp www.dalsemi.com FEATURES Very low operating power: 12 µA typ

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FDS4480 February 2002 FDS4480 40V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve

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FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ Features „ Max rDS(

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FDS4935A March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild

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FDS4435A October 2001 FDS4435A P-Channel Logic Level PowerTrench® MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fa

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FDS4935 June 2001 FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Se

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FDS4935BZ FDS4935BZ Dual 30 Volt P-Channel PowerTrench“ MOSFET General Description Features This P-Channel MOSFET has been designed specifically

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MOSFET – Complementary, POWERTRENCH) 60 V FDS4559 General Description This complementary MOSFET device is produced using onsemi’s advanced PowerTrenc

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MOSFET – P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW FDS4435BZ Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH pro

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FDS4559-NL N- and P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) 0.026 at VGS = 10 V

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FDS4897AC Dual N & P-Channel PowerTrench® MOSFET FDS4897AC October 2008 Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40 V, 6.1 A, 26 mΩ P-Chan

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April 1998 FDS4410 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been des

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40V N+P Dual Channel MOSFETs PDS4701 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMO

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FDS4435BZ-NL FDS4435BZ-NL Datasheet www.VBsemi.com P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V

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40V N-Channel MOSFETs PDS4906 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community ADS4222, ADS4225, ADS4226 ADS4242, ADS4245, ADS4246 SBAS533D

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