E201 Datasheet | Specifications & PDF Download

INTEGRATED CIRCUITS DATA SHEET P90CE201 16-bit microcontroller Product specification File under Integrated Circuits, IC21 August 1993 Philips Semico

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NTE2016/NTE2017/NTE2018/NTE2019/NTE2020 Integrated Circuit 8–Channel Darlington Array/Driver Description: Ideally suited for interfacing between low–l

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http://www.ncepower.com Pb Free Product NCE2010E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2010E uses advanced trench technolog

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Metal Alloy Inductors メタルアロイ®インダクタ DFE201612R Inductance Range: 0.47~2.2H Recommended patterns パターン (Unit: mm) (Unit: mm) FEATURES  Miniature s

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PE2017 N-Channel Enhancement Mode Power MOSFET Description The PE2017 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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MATERIAL DECLARATION SHEET Material # Product Line Date Rev., date CE2012 Series (C=1.25) Ceramic Chip Inductor March 2005 NO. 1 Construction elemen

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NTE2016/NTE2017/NTE2018/NTE2019/NTE2020 Integrated Circuit 8–Channel Darlington Array/Driver Description: Ideally suited for interfacing between low–l

(28 views)

N-Channel Enhancement Mode Power MOSFET Description The PE2012 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It ca

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NTE2011/NTE2012/NTE2013/NTE2014/NTE2015 Integrated Circuit 7–Channel Darlington Array/Driver Description: The NTE2011 through NTE2015 are high–voltage

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DATA SHEET CURRENT SENSOR - LOW TCR PE series 5%, 1% sizes 0603/0805/1206/2010/2512/4527 RoHS compliant & Halogen free Product specification – August

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N-Channel Enhancement Mode Power MOSFET Description The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c

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INTEGRATED CIRCUITS DATA SHEET P90CE201 16-bit microcontroller Product specification File under Integrated Circuits, IC21 August 1993 Philips Semico

(25 views)

PE2012 N-Channel Enhancement Mode Power MOSFET Description The PE2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge

(25 views)

www.DataSheet4U.com DataSheet4U.com DataShe e DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet4U.com et4U.com DataShe e Dat

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ACE2010M P-Channel -100V MOSFET Description The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(

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SMD Alloy Molding Power Inductors – AME Series Alloy Molding Power Inductors Chilisin’s AME Series provides high current and low DCR in compact sizing

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NTE2011/NTE2012/NTE2013/NTE2014/NTE2015 Integrated Circuit 7–Channel Darlington Array/Driver Description: The NTE2011 through NTE2015 are high–voltage

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NTE2011/NTE2012/NTE2013/NTE2014/NTE2015 Integrated Circuit 7–Channel Darlington Array/Driver Description: The NTE2011 through NTE2015 are high–voltage

(23 views)

NTE2016/NTE2017/NTE2018/NTE2019/NTE2020 Integrated Circuit 8–Channel Darlington Array/Driver Description: Ideally suited for interfacing between low–l

(23 views)

Confidentia 600W Transient Voltage Suppressor SMD Diodes Specialist P6KE-HF Series Stand-off Voltage: 6.8 ~ 600V Power Dissipation: 600 Watts RoHS

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