E201 Datasheet | Specifications & PDF Download

Engineering Bulletin @Endurance with ripple current : 105C 1000 hours @Solvent-proof type except 350 to 400Vdc @Pb-free design No.511P / Oct.2004 St

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DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete

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www.DataSheet4U.com W79E201 Data Sheet 8-BIT MICROCONTROLLER Table of Contents1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. GENERAL DESCRIPTION

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Marvell® Alaska® 88E2010/88E2040L Single and Quad 10/100/1000/2.5G/5GBASE-T Ethernet Transceiver Datasheet - Public Doc. No. MV-S111597-U0 Rev. D Cop

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Datasheet 4.5 V to 28 V Input, 2.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter BD9E201FP4-Z General Description BD9E201FP4-Z is a s

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N-Channel Enhancement Mode Power MOSFET Description The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c

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N-Channel Enhancement Mode Power MOSFET Description The PE2012 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It ca

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Metal Alloy Inductors メタルアロイ®インダクタ DFE201612R Inductance Range: 0.47~2.2H Recommended patterns パターン (Unit: mm) (Unit: mm) FEATURES  Miniature s

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www.vishay.com NTCLE201E3 SB, NTCLE300E3 SB Vishay BCcomponents NTC Thermistors, 2-Point Mini Chip Sensor, Flexible Leads ADDITIONAL RESOURCES

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Metal Alloy Inductors メタルアロイ®インダクタ DFE201610E Inductance Range: 0.24~10H Recommended patterns パターン (Unit: mm) (Unit: mm) FEATURES  Miniature si

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Metal Alloy Inductors メタルアロイ®インダクタ DFE201610C Inductance Range: 0.56~2.2H Recommended patterns パターン (Unit: mm) (Unit: mm) FEATURES  Miniature s

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NTE2016/NTE2017/NTE2018/NTE2019/NTE2020 Integrated Circuit 8–Channel Darlington Array/Driver Description: Ideally suited for interfacing between low–l

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Confidentia 600W Transient Voltage Suppressor SMD Diodes Specialist P6KE-HF Series Stand-off Voltage: 6.8 ~ 600V Power Dissipation: 600 Watts RoHS

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THERMALLY PROTECTED SERIES INTRODUCTION The Thermally Protected Series is designed for safe disconnection of the varistor from the circuit due to ab

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n-channel JFETs designed for • • • - • General Purpose Amplifiers o co-e III H Performance Curves NP See Section 4 BENEFITS • High Input Impedance IG

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Metal Alloy Inductors メタルアロイ®インダクタ DFE201210U Inductance Range: 0.24~2.2H Recommended patterns パターン (Unit: mm) (Unit: mm) FEATURES  Miniature s

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