E231 Datasheet | Specifications & PDF Download

PE2319 P-Channel Enhancement Mode Power MOSFET Description The PE2319 uses advanced trench technology to provide excellent RDS(ON) and low gate charg

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http://www.ncepower.com Pb Free Product NCE2312 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2312 uses advanced trench technology

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WͲŚĂŶŶĞů ŶŚĂŶĐĞŵĞŶƚDŽĚĞWŽǁĞƌDK^& d S Ϯϯϭϭ BVDSS RDS(ON) ID -60V 175mΩ -2.2A Description The 6(2311B is the highest performance trench P-ch

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www.DataSheet4U.com CLE230,CLE231,CLE232,CLE233 High Power Aluminum Gallium Arsenide IREDs 0.210 (5.33) 0.190 (4.83) 1.00 (25.4) min. ® Clairex Feb

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WILLAS SOT-23 Plastic-Encapsulate MOSFETS SE2310 N-Channel MOSFET DESCRIPTION The SE2310 uses advanced trench technology to provide excellent RDS(ON

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NTE231 Silicon Controlled Rectifier (SCR) TV Deflection Circuit Features: D CTV 110° – CRT Horizontal Deflection D Comutater Switch Absolute Maximum R

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NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with a

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User‘s Guide Dell E2214H Dell E2314H Model No.: E2214H / E2314H Regulatory model: E2214Hb / E2314Hf Free Datasheet http://www.datasheet4u.com/ NOTE

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http://www.ncepower.com Pb Free Product NCE2312A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2312A uses advanced trench technolo

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Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design MSP430AFE253, MSP430AFE252, MSP430AFE251 MSP4

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PE2317 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2317 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

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PE2312 Dual Enhancement Mode Power MOSFET (N- and P- Channel) DESCRIPTION The PE2312 uses advanced trench technology to provide excellent RDS(ON), l

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NTE2312 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed f

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Datasheet Voltage Detector IC Series for Automotive Counter Timer Built-in CMOS Voltage Detector IC BD45Exxxx-M series BD46Exxxx-M series ●General

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n-channel JFETs designed for • • • • Audio and Sub-Audio Amplifiers H Performance Curves NS See Section 4 BENEFITS • Ultra Low Noise en = 8 nV/y'HZ T

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for

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NTE2313 Silicon NPN Transistor High Speed Switch Description: The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO

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N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION The ME2312-G is the N-Channel logic enhancement mode power field effect transistors are produced using

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NTE2314 Silicon PNP Transistor High Current, High Speed Switch (Compl to NTE2304) Description: The NTE2314 is a silicon PNP transistor in a TO3P type

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