n-channel JFETs designed for • • • • Audio.
PE2317 - P-Channel Enhancement Mode Power MOSFET
PE2317 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2317 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.
Matsuki
ME2317D-G - P-Channel 30V (D-S) MOSFET
P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME2317D-G is the P-Channel logic enhancement mode power field effect transistors are produced using.
Clairex
CLE231 - High Power Aluminum Gallium Arsenide IREDs
www.DataSheet4U.com CLE230,CLE231,CLE232,CLE233 High Power Aluminum Gallium Arsenide IREDs 0.210 (5.33) 0.190 (4.83) 1.00 (25.4) min. ® Clairex Feb.
Fairchild Semiconductor
KE231 - (KE Series) Encased Amplifiers
www.DataSheet4U.com www.fairchildsemi.com KE Series Encased Amplifiers Features I I I I I General Description The KE Series amplifiers are designed.
Rohm
BD45E231 - CMOS Voltage Detector
Datasheet Voltage Detector IC Series for Automotive Counter Timer Built-in CMOS Voltage Detector IC BD45Exxxx-M series BD46Exxxx-M series ●General .
Rohm
BD46E231 - CMOS Voltage Detector
Datasheet Voltage Detector IC Series for Automotive Counter Timer Built-in CMOS Voltage Detector IC BD45Exxxx-M series BD46Exxxx-M series ●General .
Siliconix
E231 - n-channel JFET
n-channel JFETs designed for • • • • Audio and Sub-Audio Amplifiers H Performance Curves NS See Section 4 BENEFITS • Ultra Low Noise en = 8 nV/y'HZ T.
Din-Tek
DTE2312 - N-Channel MOSFET
N-Channel 20-V (D-S) MOSFET DTE2312 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.056 at VGS = 10 V 0.059 at VGS = 4.5 V 0.064 at VGS = .
NCE Power Semiconductor
NCE2312 - NCE N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com Pb Free Product NCE2312 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2312 uses advanced trench technology.
Central Corp
MJE231 - PNP SILICON POWER TRANSISTOR
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .
NTE
NTE2311 - Silicon NPN Transistor
NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for .
NTE
NTE2317 - Silicon NPN Transistor
NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a m.
Matsuki
ME2318S-G - N-Channel 40V (D-S) MOSFET
N-Channel 40V (D-S) MOSFET ME2318S /ME2318S-G GENERAL DESCRIPTION The ME2318S-G is the N-Channel logic enhancement mode power field effect transisto.
Matsuki
ME2312 - N-Channel 20V (D-S) MOSFET
N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION The ME2312-G is the N-Channel logic enhancement mode power field effect transistors are produced using.
DELL
E2314H - (E2214H / E2214H) Users Guide
User‘s Guide Dell E2214H Dell E2314H Model No.: E2214H / E2314H Regulatory model: E2214Hb / E2314Hf Free Datasheet http://www.datasheet4u.com/ NOTE.
NCE Power Semiconductor
NCE2312A - NCE N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com Pb Free Product NCE2312A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2312A uses advanced trench technolo.
ROHM
BD45E231-M - CMOS Voltage Detector
Datasheet Voltage Detector IC Series for Automotive Counter Timer Built-in CMOS Voltage Detector IC BD45Exxxx-M series BD46Exxxx-M series ●General .
Texas Instruments
MSP430AFE231 - Mixed-Signal Microcontroller
Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design MSP430AFE253, MSP430AFE252, MSP430AFE251 MSP4.
ChipSourceTek
PE2319 - P-Channel Enhancement Mode Power MOSFET
PE2319 P-Channel Enhancement Mode Power MOSFET Description The PE2319 uses advanced trench technology to provide excellent RDS(ON) and low gate charg.
Sanyo Semicon Device
LC66E2316 - Four-Bit Single-Chip Microcontroller
CMOS LSI No. 5486 LC66E2316 Four-Bit Single-Chip Microcontroller with 16 KB of On-Chip EPROM Preliminary Overview The LC66E2316 is an on-chip EPROM .
