Infrared Emitting Diodes(GaAs) K O D E N S H I E.
P3055LDG - N-Channel MOSFET
P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 90mΩ @VGS = 10V 12A TO-252 ABSOLUTE MAXIMUM RA.2N3055 - COMPLEMENTARY SILICON POWER TRANSISTORS
TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector.STU3055L2-60 - N-Channel Enhancement Mode Field Effect Transistor
www.DataSheet4U.com STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUM.K1305 - Silicon N-Channel MOSFET
2SK1305 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 .CS8305E - 5.0W mono / ultra-low EMI / filterless Class-D audio amplifier
Chipstar Micro-electronics CS8305E 5.0W、EMI、D C S 8 3 0 5 E , E M I,5 . 0 W D 。CS8305EPWM 、P C B , 。 9 0 % , .TIP3055 - Complementary power transistors
TIP2955 TIP3055 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Application.3052P - SI-3052P
qSI-3000P Series SI-3000P Series 3-Terminal, Dropper Type sFeatures • TO-3P package 3-terminal regulator • Output current: 2.0A • Wide range of DC in.P3057LD - N-Channel Logic Level Enhancement Mode Field Effect Transistor
NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3057LD TO-252 (DPAK) D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 12A 1. .SI-3052 - Regulator
qSI-3000V Series SI-3000V Series 3-Terminal, Low Dropout Voltage Dropper Type sFeatures • • • • TO-3P package 3-terminal regulator Output current: 2.NAS6305 - (NAS6303 - NAS6316) A 286 Stainless Steel / Bolt
26 NAS6303 - NAS6316 Series Specifications A 286 Stainless Steel Bolt, Hex Head, Close Tolerance 160,000 PSI Short Thread Basic No. NAS 6303 NAS 630.EM5305 - 12V Synchronous Buck controller
12V Synchronous Buck controller General Description The EM5305 series are compact synchronous -rectified buck controllers specifically designed to ope.SI2305 - 20V P-Channel MOSFET
SI2305 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced tr.THV3056 - 3ch Buck/Boost 2ch CP 1ch HVLDO 1ch LVLDO Controller
THV3056_Rev.2.00_E THV3056 3ch Buck/Boost 2ch CP 1ch HVLDO 1ch LVLDO Controller Description THV3056 is a 3ch Buck/Boost Controller IC which enables t.SM3305PSQG - P-Channel MOSFET
SM3305PSQA/SM3305PSQG ® P-Channel Enhancement Mode MOSFET Features • -30V/-40A, RDS(ON) =12mΩ(max.) @ VGS =-10V RDS(ON) =17mΩ(max.) @ VGS =-6V .APM3055L - N-Channel MOSFET
APM3055L N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/12A, RDS(ON)=100mΩ(max) @ V =10V GS RDS(ON)=200mΩ(max) @ VGS=4.5V .IRFR5305 - P-Channel MOSFET
isc P-Channel MOSFET Transistor IRFR5305 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process t.IRF5305S - P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology .NV3052C - 2160-channel 8-bit Source Driver and GOA/GIP Gate Driver
New Vision Microelectronics Inc. DATA SHEET NV3052C 2160-channel 8-bit Source Driver and GOA/GIP Gate Driver with System-on chip for Color Amorphous T.2N3055E - Bipolar NPN Device
( DataSheet : www.DataSheet4U.com ) 2N3055E Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135).2N3055ESMD - Bipolar NPN Device
( DataSheet : www.DataSheet4U.com ) 2N3055ESMD Dimensions in mm (inches). 0.89 (0.035) min. 3.70 (0.146) 3.41 (0.134) 3.70 (0.146) 3.41 (0.134) 3.60.