EM-1011 Datasheet | Specifications & PDF Download

NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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www.DataSheet4U.com EIC1011-8 UPDATED 08/21/2007 10.70-11.70GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • 10.70–11.70GHz Bandwidth

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Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features

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MC10111 Dual 3−Input/3−Ouput NOR Gate The MC10111 is designed to drive up to three transmission lines simul− taneously. The multiple outputs of this

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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Monolithic Hall Effect ICs　EM-series EM-1011 Shipped in packet-tape reel(5000pcs/Reel) EM-1011 is ultra-small Hall effect ICs of a single silicon c

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Ordering number : ENN6593 FTD1011 P-Channel Silicon MOSFET FTD1011 Ultrahigh-Speed Switching Applications Features • • • • Package Dimensions unit

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations fo

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CY7C1011DV33 2-Mbit (128 K × 16) Static RAM 2-Mbit (128 K × 16) Static RAM Features ■ Pin-and function-compatible with CY7C1011CV33 ■ High speed ❐ tA

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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CY7C1011BV33 128K x 16 Static RAM Features • 3.0 – 3.6V Operation • High speed — tAA = 12, 15 ns • CMOS for optimum speed/power • Low active power —

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www.DataSheet4U.com TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz

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Terminal Blocks Type 8WA1 Through-Type Terminals Through-type Terminals with Thermoplastic Body, Screw Terminals on Both Sides Illustration Approval I

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Excelics • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(49d

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XP1011ALMT Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ RoH

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CY7C1011CV33 2-Mbit (128 K × 16) Static RAM 2-Mbit (128 K × 16) Static RAM Features ■ Temperature ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A

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NSB1011XV6T5 Preferred Device Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bia

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