EM-1011 Datasheet | Specifications & PDF Download

NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations fo

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MC10111 Dual 3−Input/3−Ouput NOR Gate The MC10111 is designed to drive up to three transmission lines simul− taneously. The multiple outputs of this

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdo

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MC10116 Triple Line Receiver The MC10116 is a triple differential amplifier designed for use in sensing differential signals over long lines. The base

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www.DataSheet4U.com EIC1011-8 UPDATED 08/21/2007 10.70-11.70GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • 10.70–11.70GHz Bandwidth

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NSB1011XV6T5 Preferred Device Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bia

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www.DataSheet4U.com Metal Can Infrarred Emitter MTE1011P Features High Output Power High Reliability Narrow Beam Angle Applications Optical Switche

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NTS10100EMFS, NRVTS10100EMFS Very Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very L

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PE1011E P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE1011E uses advanced trench technology to provide excellent RDS(ON), low gate charg

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ICP-10111 High Accuracy, Low Power, Barometric Pressure and Temperature Sensor IC GENERAL INFORMATION The ICP-10111 pressure sensor family is based

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Monolithic Hall Effect ICs　EM-series EM-1011 Shipped in packet-tape reel(5000pcs/Reel) EM-1011 is ultra-small Hall effect ICs of a single silicon c

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Micron Confidential and Proprietary 88-Ball Parallel NOR and PSRAM MCP Features Parallel NOR and PSRAM 88-Ball MCP Combination Memory MT38W1011A90YZQ

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