EM4 Datasheet | Specifications & PDF Download

CEM4410B Dec. 2002 N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 12.5A , RDS(ON)=9.5m Ω @VGS=10V. RDS(ON)=14m Ω @VGS=4.5V. Sup

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CEM4412S1 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V , 7A , RDS(ON)=28m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. Super h

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CEM4435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 33mΩ @VGS = -4.5V. Super high de

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page 1 2 EM4 sheet 2 FP date 1953.04.04 1999.07.10

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P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.2A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. Super high dense ce

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CEM4953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.5A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super

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CEM4228 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 6.3A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. Super high

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CEM4936 Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.026 at VGS = 4.5 V ID (A)

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Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell

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www.DataSheet4U.com 64Mb SDRAM Ordering Information EM 48 2M 32 4 4 V T A – 5 L EOREX Logo EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : :

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CEM4401 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -5.4A, RDS(ON) = 53mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high

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CEM4309 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 40V, 5.8A, RDS(ON) = 38mΩ @VGS = 10V. RDS(ON) = 50mΩ @V

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EM MICROELECTRONIC - MARIN SA EM4205 EM4305 512 bit Read/Write Multi-purpose Contactless Identification Device Description EM4205/4305 is a CMOS in

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CEM4416 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9A, RDS(ON) = 18mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense

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CEM4269 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -4

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CEM4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -9.3A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high d

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CEM4501 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 20V, 8.3A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V.

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CEM4042-VB CEM4042-VB Datasheet N-Channel 40-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0038 at VGS = 10 V 40 0.0057 at

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