EMB2 Datasheet | Specifications & PDF Download

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐18A G UIS, Rg 100% Tested

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 6.5mΩ 20mΩ ID 26A

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 15A G UIS, Rg 100% Tested

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EMB20P03VAT P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐8.7A G S Pb‐

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐35A G UIS, Rg 100% Tested

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 22mΩ ID 6A G UIS, Rg 100% Tested S

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EMB20P03G P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐10A G UIS, Rg

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐35A G UIS, Rg 100% Tested

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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V RDSON (MAX.) 22mΩ ID 8A Pb‐Free Lead Plating &

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 22mΩ ID 15A G UIS, Rg 100% Tested

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) ID N‐CH 40V 22mΩ 7.5A P‐CH ‐40V 42mΩ ‐6A D

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 20mΩ ID 12A N‐Channel MOSFET UIS, Rg 1

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EMB25A06S Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 30mΩ ID 7A UIS, 100% Te

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PEMB24; PUMB24 PNP/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Rev. 02 — 2 September 2009 Product data sheet 1. Product profile 1.1

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 9.5A G UIS, Rg 100% Tested

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 30mΩ ID 50A G UIS, Rg 100% Tested

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EMB2 / UMB2N / IMB2A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2 EMT6 (6

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EMB20P03VAT-L P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -30V RDSON (MAX.) 20mΩ ID -8.7A G Sin

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