EMB2 Datasheet | Specifications & PDF Download

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐18A G UIS, Rg 100% Tested

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 20mΩ ID 12A N‐Channel MOSFET UIS, Rg 1

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 20mΩ 30mΩ

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB2 PNP resistor-equipped double transistor R1 = 47 kΩ, R2 = 47 kΩ Product specification 2001 Sep 14 Ph

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 6.5mΩ 20mΩ ID 26A

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PEMB20; PUMB20 PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 03 — 1 September 2009 Product data sheet 1. Product profile 1.1

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 22mΩ ID 9A G S Pb‐Free Lead Plating

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 9.5A G UIS, Rg 100% Tested

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EMB21C03A N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) N‐CH 30V 21mΩ P‐CH ‐30V 40mΩ D1

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PEMB24; PUMB24 PNP/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Rev. 02 — 2 September 2009 Product data sheet 1. Product profile 1.1

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EMB20P03VAT P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐8.7A G S Pb‐

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 15A G UIS, Rg 100% Tested

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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 40V ‐40V RDSON (MAX.) 22mΩ 50mΩ ID 33A

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EMB20N03VAA N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 7A G UIS, Rg 1

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐35A G UIS, Rg 100% Tested

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EMB20P03VAT-L P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -30V RDSON (MAX.) 20mΩ ID -8.7A G Sin

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EMB28P06V Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: P-CH BVDSS -60V RDSON (MAX

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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V RDSON (MAX.) 28mΩ ID 7A Pb‐Free Lead Plating &

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EMB20P03G P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐10A G UIS, Rg

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