EMB4 / UMB4N General purpose (dual digital transis.
EMB45P03A - MOSFET
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 50mΩ ID ‐10A G UIS, Rg 100% Tested.EMB4 - General purpose transistors
General purpose transistors (dual digital transistors) EMB4 FEATURES z Two DTA114T chips in a package Marking: B4 Equivalent circuit (3) (2) (1) R.EMB44P04Q - P-Channel Logic Level Enhancement Mode Field Effect Transistor
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐40V RDSON (MAX.) 44mΩ ID ‐6A G UIS, Rg 100% Tested .EMB40A03K - MOSFET
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D1 D2 RDSON (MAX.) ID 40mΩ 4.5A G1 G2 S1 S2 .EMB45P03G - P-Channel Logic Level Enhancement Mode Field Effect Transistor
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 45mΩ ID ‐6A G S Pb‐Free Lead Plati.EMB45P03P - MOSFET
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 50mΩ ID ‐4A G S Pb‐Free Lead Plati.EMB40P06A - MOSFET
P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐60V RDSON (MAX.) 62mΩ ID ‐17A G UIS, Rg 100% Tested.EMB45N06G - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 45mΩ ID 6.5A G UIS, Rg 100% Tested .EMB40A06S - MOSFET
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 40mΩ ID 6A UIS, 100%.EMB45A06G - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB45A06G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 6A UIS, Rg 100%.EMB4 - Dual Digital Transistors
EMB4 / UMB4N General purpose (dual digital transistor) Datasheet Parameter VCEO IC R1 DTr1 and DTr2 -50V -100mA 10kΩ lFeatures 1)Two DTA114T c.EMB44P04A - P-Channel Logic Level Enhancement Mode Field Effect Transistor
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -40V RDSON (MAX.) 44mΩ ID -25A P Channel MOSFET UIS, Rg.PEMB4 - PNP/PNP resistor-equipped transistors
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB4 PNP resistor-equipped double transistor R1 = 10 kΩ, R2 = open Preliminary specification 2001 Sep 14 .SEMB4 - PNP Silicon Digital Transistor Array Preliminary data
SEMB4 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) interna.EMB45N06A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 45mΩ ID 18A G UIS, Rg 100% Tested .EMB4 - Dual Digital Transistors
JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) EMB4 Dual Digital Transistors (PNP+PNP) SOT-563 F.EMB4FHA - Digital Transistor
EMB4 FHA General purpose (Dual digital transistor) Datasheet AEC-Q101 Qualified Parameter VCEO IC R1 DTr1 and DTr2 -50V -100mA 10kΩ lFeature.