EMB9 Datasheet | Specifications & PDF Download

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 85mΩ ID 5A G UIS, Rg 100% Tested S

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 85mΩ ID 5.2A G UIS, Rg 100% Tested

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐60V RDSON (MAX.) 90mΩ ID ‐5A G UIS, Rg 100% Tested

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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V RDSON (MAX.) 85mΩ ID 4.5A UIS, Rg 100% Tested P

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2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 40mΩ 45mΩ ID 5.5

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐60V RDSON (MAX.) 90.8mΩ ID ‐10A G UIS, Rg 100% Test

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EMB9 / UMB9N / IMB9A Transistors General purpose (dual digital transistors) EMB9 / UMB9N / IMB9A Features 1) Two DTA144Ys in a EMT or UMT or SMT pac

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 85mΩ ID 10A G UIS, Rg 100% Tested

Rating: 1 ★ (3 votes)

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐60V RDSON (MAX.) 90mΩ ID ‐10A G UIS, Rg 100% Tested

Rating: 1 ★ (2 votes)

2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 100V ‐100V RDSON (MAX.) 250mΩ 300mΩ ID

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DISCRETE SEMICONDUCTORS DATA SHEET PEMB9; PUMB9 PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product specification Supersedes data o

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SEMB9 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) interna

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JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) EMB9 Dual Digital Transistors (PNP+PNP) FEATURES z

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