ERICSSON Datasheet | Pinout, Features, Price Comparison & PDF

PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10043 is an internally matched GOLDMOS FET intended for large si

PKE 4000 I 25–40 W DC/DC Power Modules 48 V Input Series • Single, dual and triple output • 10.7 mm (0.42 in.), allows 0.8 in. board spacing • 1,500 V

                                                            


 

EN/LZT 720 0318 Uen R2A RBS 2106 and RBS 2206 Radio Configurations Description This document describes the radio configurations for RBS 2106 and RB

February 1999 PBD 3548/1 Universal Source Driver Description PBD 3548/1 is a bipolar universal high-current highly-protected high side driver with tr

PKG 4000 I 30–60 W DC/DC Power Modules 48 V Input Series • Efficiency typ 86% (5 V) at full load • Low profile 11.0 mm (0.43 in.) • 1,500 V dc isola

www.DataSheet.co.kr W2x Series Fixed Wireless Terminals for WCDMA/HSDPA Mobile Networks Technical Product Description Datasheet pdf - http://www.Da

EN/LZT 720 0318 Uen R2A RBS 2106 and RBS 2206 Radio Configurations Description This document describes the radio configurations for RBS 2106 and RB

PRELIMINARY PTF 102015* GOLDMOS® Field Effect Transistor 30 Watts, 2110-2170 MHz Description Efficiency (%)x Adjacent Channel Power Ratio (dB) T

PTF 10019 70 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for ce

e PTF 10100 165 Watts, 860–900 MHz LDMOS Field Effect Transistor Description The 10100 is an internally matched common source N-channel enhancement-mo

Contents Getting started 6 Assembly, SIM card, battery, turning on, start-up menu, calls. Sony Ericsson W810a Connectivity

HR202L HR202L HR202L ，，，、、、 、、。 （at25℃ 1kHz 1V AC 60%RH ） （at25℃ 1kHz 1V AC 60%RH ） 20…95%RH 0…60℃ 1.5V AC(Max ) 500Hz…2k

February 1999 PBL 3771/1 Precision Stepper Motor Driver Description The PBL 3771/1 is a switch-mode, constant-current driver IC (chopper) with two ch

PGT 204 05 DFB/EA Laser Module for 10 Gb/s Applications Key Features • 1550 nm DFB CW source monolithicly integrated with an Electro Absorptionmodula

PTF 10020 125 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for

PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancemen

e PTB 20081 150 Watts, 470–860 MHz UHF TV Power Transistor Description The 20081 is a class AB, NPN, common emitter RF power transistor intended for 2

PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10112 is an internally matched common source N-channel enhancemen

PTF 10137 12 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier appl