Eudyna Devices Datasheet | Specifications & PDF Download

w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 38.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =

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Preliminary ES/FMM5320ZW Single-Pole Double-Throw Switch GaAs PHEMT High Power Switch DC - 2.0 GHz • Low Insertion Loss: 0.45 dB at 2GHz • Low volt

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FMM5051VU Ku band Power Amplifier MMIC FEATURES ・High Output Power: 31.5dBm(typ.) ・High Linear Gain: 31.5dB(typ.) ・Low Input VSWR ・Broad Band: 13.75~1

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FEATURES • High Output Power: P1dB = 40.0dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: ηadd = 40% (Typ.) • Proven Reliability • Hermeticall

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w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 41.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =

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Eudyna GaN-HEMT 10W Preliminary FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 28.5dB(typ.) at Pout=22dBm(Avg.) ・Broad Frequency Range : 2110

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www.DataSheet4U.com FLM3742-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 10.5

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www.DataSheet4U.com FLM3742-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 11.5

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www.DataSheet4U.com Preliminary FEATURES ・High Output Power: Pout=33.0dBm (typ.) ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impeda

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www.DataSheet4U.com Preliminary ES/EMM5322ZU Double Pole Double Throw GaAs PHEMT Switch 0.1 – 6 GHz FEATURES • • • • • • Low Insertion Loss: 0.8 d

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Preliminary ES/EMM5317ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications • High Input P0.1dB: 34 dBm Typ • Low

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Preliminary ES/EMM5326ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications • Small size and low-cost SC-70 / SOT

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Preliminary ES/EMM5328ZW Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications • Small size and low-cost SC-70 /

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ES/FMM5804YD K,Ka-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 24.5 dBm (Typ.) •High Linear Gain; GL = 17 dB(Typ.) •Frequency Band ;

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FMM5056VF 5.8-7.2GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm(typ.) ・High Linear Gain: 28.0dB(typ.) ・Low VSWR ・Broad Band: 5.8～7.2GHz

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www.DataSheet4U.com FLL400IK-2 High Voltage - High Power GaAs FET FEATURES •E High Output Power: P1dB=46.5dBm(Typ.) •E High Gain: G1dB=12.0dB(Typ.) •

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FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1

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FEATURES • High Output Power: P1dB = 28.8dBm (Typ.) • High Gain: G1dB = 8.5dB(Typ.) • High PAE: ηadd = 35%(Typ.) • Proven Reliability • Hermetic Metal

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PIN Photodiode FEATURES • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm

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PIN Photodiode FEATURES • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm

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