Eudyna Devices Datasheet | Specifications & PDF Download

www.DataSheet4U.com EMM5834X Ku / K-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 26 dBm (Typ.) •High Gain; G1dB = 23 dB(Typ.) •Wide Frequ

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www.DataSheet4U.com Preliminary FEATURES ・High Output Power: Pout=33.0dBm (typ.) ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impeda

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www.DataSheet4U.com Preliminary ES/EMM5317ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • •

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www.DataSheet4U.com FLM3742-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 10.5

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Preliminary ES/EMM5326ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications • Small size and low-cost SC-70 / SOT

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FMM5054VF Ku Band Power Amplifier MMIC FEATURES ・High Output Power: 32.5dBm(typ.) ・High Linear Gain: 31.0dB(typ.) ・Low Input VSWR ・Impedance Matched Z

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EMM5074VU FEATURES ・High Output Power: Pout=33dBm (typ.) ・High Linear Gain: GL=27dB (typ.) ・Broad Band: 5.8 - 8.5GHz ・Impedance Matched Zin/Zout=50Ω

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PIN Photodiode FEATURES • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm

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Preliminary ES/EMM5317ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications • High Input P0.1dB: 34 dBm Typ • Low

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Preliminary ES/FMM5320ZW Single-Pole Double-Throw Switch GaAs PHEMT High Power Switch DC - 2.0 GHz • Low Insertion Loss: 0.45 dB at 2GHz • Low volt

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Preliminary ES/EMM5328ZW Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications • Small size and low-cost SC-70 /

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FMM5052ZE MMIC Power Amplifier FEATURES • Wide Frequency Band: 0.8 to 2.7GHz • Medium Power: P1dB=26dBm (Typ.) @ f=0.8 - 2.7GHz • High Linear Gain: GL

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FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.)

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InGaAs-PIN/Preamp Receiver FEATURES • Small Form Factor Package(GW): 9 pins coplanar • Integrated Design Optimizes Performance at Bit Rates up to 12.5

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FLL21E090IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation (VDS=28V) GaAs FET ・High Gain: 15.5dB(typ.) at Pout=43dBm(Avg.) ・Broad Frequ

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FEATURES ・High Output Power: Pout=33.5dBm (typ.) ・High Linear Gain: GL=30dB (typ.) ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT P

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FEATURES ・High Output Power: Pout=33.0dBm (typ.) ・High Linear Gain: GL=24.0dB (typ.) ・Broad Band: 12.7~15.4GHz ・Impedance Matched Zin/Zout=50Ω ・Small

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( DataSheet : www.DataSheet4U.com ) FMM5118X 20-32GHz Doubler MMIC FEATURES • Integrated Monolithic Doubler • High Harmonic Rejection • Single Suppl

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Eudyna GaN-HEMT 10W Preliminary FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 28.5dB(typ.) at Pout=22dBm(Avg.) ・Broad Frequency Range : 2110

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www.DataSheet4U.com Preliminary FEATURES ・High Output Power: Pout=33.0dBm (typ.) ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impeda

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