Eudyna Devices Datasheet | Specifications & PDF Download

FLK207XV GaAs FET & HEMT Chips FEATURES •www.DataSheet4U.com High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd

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InGaAs-PIN/Preamp Receiver FEATURES • Small Form Factor Package(GW): 9 pins coplanar • Integrated Design Optimizes Performance at Bit Rates up to 10.7

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www.DataSheet4U.com 1,310nm DFB CATV Laser FEATURES • • • • • Direct Modulation DFB Laser Built-in TEC, Thermistor and Monitor PD Optical Isolator 14

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Preliminary ES/EMM5327ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications • High Input P0.1dB: 34 dBm Typ • Low

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InGaAs-APD/Preamp Receiver FEATURES • • • • • Data rate up to 622Mb/s High Responsibility: typ. 0.85A/W at 1,550nm 30µm active area APD chip with GaAs

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FLC257MH-8 C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 34.0dBm(Typ.) • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 35%(Typ.) • Pro

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( DataSheet : www.DataSheet4U.com ) FMM5116X 20-32GHz Upconverter MMIC FEATURES • • • • Integrated Monolithic Upconverter High Linearity Single Supp

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www.DataSheet4U.com Avalanche Photodiode FEATURES • • • • • • • • Data rates up to 2.5Gb/s Operating temperature: -40°c to 85°C Photosensitive diamet

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www.DataSheet4U.com FLM3742-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 11.0d

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FMM5057X C-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 34 dBm (Typ.) •High Linear Gain; GL = 27 dB(Typ.) •Frequency Band ; 7.1 - 8.5

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FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.)

Rating: 1 ★ (4 votes)

FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Prove

Rating: 1 ★ (4 votes)

FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.)

Rating: 1 ★ (4 votes)

InGaAs-APD/Preamp Receiver FEATURES • Integrated Design Optimizes Performance at High Bit Rates up to 10 Gb/s applications. • -25 dBm Typical Sensitiv

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InGaAs-APD/Preamp Receiver FEATURES • 5pins co-axial ROSA(Receiver Optical Subassembly) with LC Receptacle • APD with +3.3V pre-amplifier • Wide band:

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InGaAs-APD/Preamp Receiver FEATURES • • • • • Data rate up to 622Mb/s High Responsibility: typ. 0.85A/W at 1,550nm 30µm active area APD chip with GaAs

Rating: 1 ★ (4 votes)

FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation (VDS=28V) GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Fre

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FMM5059VF Ku Band Power Amplifier MMIC FEATURES ・High Output Power: 35.0dBm(typ.) ・High Linear Gain: 29.0dB(typ.) ・Low Input VSWR ・Broad Band: 13.

Rating: 1 ★ (4 votes)

FEATURES • High Output Power: P1dB=35.5dBm (Typ.) • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package •

Rating: 1 ★ (4 votes)

PIN Photodiode FEATURES • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm

Rating: 1 ★ (3 votes)