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Eudyna Devices Datasheet, Features, Application

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Eudyna Devices

FMM5059VU - Ku-Band Power Amplifier MMIC

FEATURES ・High Output Power: Pout=33.5dBm (typ.) ・High Linear Gain: GL=30dB (typ.) ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT P.
1.0 · rating-1
Eudyna Devices

FPD5W1KX - Avalanche Photodiode

www.DataSheet4U.com Avalanche Photodiode FEATURES • • • • • • • • Data rates up to 2.5Gb/s Operating temperature: -40°c to 85°C Photosensitive diamet.
1.0 · rating-1
Eudyna Devices

ESM5832VU - K-Band Power Amplifier MMIC

Preliminary FEATURES ・High Output Power: Pout=31.0dBm (typ.) ・High Linear Gain: GL=23.0dB (typ.) ・Broad Band: 21.2~26.5GHz ・Impedance Matched Zin/Zout.
1.0 · rating-1
Eudyna Devices

EMM5075VU - Ku-Band Power Amplifier MMIC

FEATURES ・High Output Power: Pout=33.0dBm (typ.) ・High Linear Gain: GL=24.0dB (typ.) ・Broad Band: 12.7~15.4GHz ・Impedance Matched Zin/Zout=50Ω ・Small .
1.0 · rating-1
Eudyna Devices

FLL57MK - L-Band Medium & High Power GaAs FET

FLL57MK L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB = 36.0dBm (Typ.) • High Gain: G1dB = 11.5dB (Typ.) • High PAE: ηadd = .
1.0 · rating-1
Eudyna Devices

EMM5068VU - X-Band Power Amplifier MMIC

www.DataSheet4U.com Preliminary FEATURES ・High Output Power: Pout=33.0dBm (typ.) ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impeda.
1.0 · rating-1
Eudyna Devices

EMM5322ZU - Double Pole Double Throw GaAs PHEMT Switch

www.DataSheet4U.com Preliminary ES/EMM5322ZU Double Pole Double Throw GaAs PHEMT Switch 0.1 – 6 GHz FEATURES • • • • • • Low Insertion Loss: 0.8 d.
1.0 · rating-1
Eudyna Devices

FLK057WG - Ku Band Power GaAs FET

FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.).
1.0 · rating-1
Eudyna Devices

FLM1011-12F - Ku-Band Internally Matched FET

FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE:.
1.0 · rating-1
Eudyna Devices

FLL21E010MK - High Voltage - High Power GaAs FET

FLL21E010MK FEATURES High Voltage - High Power GaAs FET ・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm(typ.) at f=2.17GHz ・High Gain: G1.
1.0 · rating-1
Eudyna Devices

FLL21E180IU - High Voltage - High Power GaAs FET

FLL21E180IU High Voltage - High Power GaAs FET FEATURES •E High Voltage Operation : VDS=28V •E High Gain: 15.0dB(typ.) at Pout=46dBm(Avg.) •E Broad Fr.
1.0 · rating-1
Eudyna Devices

FLD5F6CX-H - Wave DFB Laser

1,550nm Continuous Wave DFB Laser FEATURES • Continuous Wave (CW) Light Source for DWDM System • Output Power: 10mW • Available at C-band ITU-T Wavele.
1.0 · rating-1
Eudyna Devices

FMM5059VF - Ku Band Power Amplifier MMIC

FMM5059VF Ku Band Power Amplifier MMIC FEATURES ・High Output Power: 35.0dBm(typ.) ・High Linear Gain: 29.0dB(typ.) ・Low Input VSWR ・Broad Band: 13..
1.0 · rating-1
Eudyna Devices

EMM5074VU - C-Band Power Amplifier MMIC

EMM5074VU FEATURES ・High Output Power: Pout=33dBm (typ.) ・High Linear Gain: GL=27dB (typ.) ・Broad Band: 5.8 - 8.5GHz ・Impedance Matched Zin/Zout=50Ω .
1.0 · rating-1
Eudyna Devices

EMM5081V1B - Ku-Band Power Amplifier MMIC

FEATURES ・High Output Power: Pout=33.5dBm (typ.) ・High Linear Gain: GL=30dB (typ.) ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT P.
1.0 · rating-1
Eudyna Devices

FLL120MK - L-Band Medium & High Power GaAs FET

FEATURES • High Output Power: P1dB = 40.0dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: ηadd = 40% (Typ.) • Proven Reliability • Hermeticall.
1.0 · rating-1
Eudyna Devices

FLC097WF - C-Band Power GaAs FET

FEATURES • High Output Power: P1dB = 28.8dBm (Typ.) • High Gain: G1dB = 8.5dB(Typ.) • High PAE: ηadd = 35%(Typ.) • Proven Reliability • Hermetic Metal.
1.0 · rating-1
Eudyna Devices

FLC107WG - C-Band Power GaAs FET

FEATURES • High Output Power: P1dB = 30.0dBm(Typ.) • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/.
1.0 · rating-1
Eudyna Devices

FLC257MH-6 - C-Band Power GaAs FET

FLC257MH-6 FEATURES • High Output Power: P1dB = 34.0dBm(Typ.) • High Gain: G1dB = 9.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Her.
1.0 · rating-1
Eudyna Devices

FLC257MH-8 - C-Band Power GaAs FET

FLC257MH-8 C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 34.0dBm(Typ.) • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 35%(Typ.) • Pro.
1.0 · rating-1
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