F12N65 Datasheet | Specifications & PDF Download

AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB1

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AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB1

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isc N-Channel MOSFET Transistor AOTF12N65 FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB1

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TSP12N65M / TSF12N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology

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FQP12N65/FQPF12N65 650V, 12A N-Channel MOSFET General Description The FQP12N65 & FQPF12N65 have been fabricated using an advanced high voltage MOSFET

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AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET

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SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor wh

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LUP12N65 / LUF12N65 650V N-Channel Enhancement Mode MOSFET Product General Description These enhancement mode power filed effect transistors havebeen

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isc N-Channel MOSFET Transistor AOTF12N65L FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-R

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LIPTAI ■ Applications • Power factor correction（PFC） • Switched mode power supplies(SMPS) • Uninterruptible Power Supply（UPS） ■ Features • Low RDS(ON)

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SLP12N65SV / SLF12N65SV SLP12N65SV / SLF12N65SV 650V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced pl

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SLP12N65S / SLF12N65S SLP12N65S / SLF12N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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■ General Description MHF12N65CT, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduct

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PFP12N65 / PFF12N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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SLP12N65C / SLF12N65C SLP12N65C / SLF12N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

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SVF12N65CFJ_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION 0B SVF12N65CFJ is an N-channel enhancement mode power MOS field effect transistor

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Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF12N65F ●： RoHS ●FEATURES：■LOW THERMAL RESISTANCE

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