F12N65 Datasheet | Specifications & PDF Download

PFP12N65 / PFF12N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor wh

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PFP12N65E / PFF12N65E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar

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FQP12N65/FQPF12N65 650V, 12A N-Channel MOSFET General Description The FQP12N65 & FQPF12N65 have been fabricated using an advanced high voltage MOSFET

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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CEP12N65/CEB12N65 CEF12N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N65 CEB12N65 CEF12N65 VDSS 650V 650

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AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB1

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STF12N65M5, STP12N65M5 Datasheet N-channel 650 V, 390 mΩ typ., 8.5 A MDmesh M5 Power MOSFET in a TO-220FP and TO-220 packages TAB 123 TO-220FP 123

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Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF12N65F ●： RoHS ●FEATURES：■LOW THERMAL RESISTANCE

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■ General Description MHF12N65CT, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduct

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PJP12N65 / PJF12N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A TO-220AB / ITO-220AB TO-220AB • Low

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LIPTAI ■ Applications • Power factor correction（PFC） • Switched mode power supplies(SMPS) • Uninterruptible Power Supply（UPS） ■ Features • Low RDS(ON)

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AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB1

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TSP12N65M / TSF12N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology

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LUP12N65 / LUF12N65 650V N-Channel Enhancement Mode MOSFET Product General Description These enhancement mode power filed effect transistors havebeen

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isc N-Channel MOSFET Transistor AOTF12N65 FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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WFF12N65LCA Product Description Silicon N-Channel MOSFET Features • 650V, 12A • RDS(ON) = 0.78Ω (Max.) @ VGS = 10V, ID = 6A • Fast switching • 100% a

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WFF12N65L Product Description Silicon N-Channel MOSFET Features � 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 40nC) � Fast Switc

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BRF12N65(CS12N65F) N-Channel MOSFET/N MOS : ，，UPS 。 Purpose: High efficiency switch mode power supplies, Electronic lamp ballasts based on half b

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