FA14 Datasheet | Specifications & PDF Download

www.DataSheet4U.com PD -2.446 rev. B 03/99 HFA140NH60R HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Rec

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PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz www.DataSheet

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PD -2.458 rev. B 02/99 HFA140NJ60C HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters TM

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www.DataSheet4U.com PD-40010 01/99 HFA140MD60D HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Pa

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www.DataSheet4U.com PD - 40009 rev. A 01/99 HFA140MD60C HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Re

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www.DataSheet4U.com PD -2.447 rev. B 03/99 HFA140NH60 HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Reco

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www.DataSheet4U.com PD -2.514 rev. A 02/99 HFA140NJ60D HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Rec

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www.vishay.com VS-HFA140FA120 Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 140 A SOT-227 FEATURES • Fast recovery time characteri

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HFA1405 POSSIOBBLESEOSLL2UE4B8TS0ET, IPETRLU5OT4DE5U5PCRTODUCT Quad, 560MHz, Low Power, Video Operational Amplifier DATASHEET FN3604 Rev 9.00 March

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www.vishay.com VS-HFA140FA60 Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 140 A SOT-227 FEATURES • Fast recovery time characteris

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www.vishay.com VS-HFA140NJ60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 167 A Lug terminal anode 1 Lug terminal anode 2 FE

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CAPACITORS March 2018 MLCC with dipped radial lead (Halogen-free, automotive grade, high temperature application) FA series (NP0, X8R) Type: Lead p

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X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA14N85XHV IXFP14N85X IXFH14N85X VDSS = ID25 =  RDS(on) 850V 14A 550m N-Cha

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 850V ·Static Drain-Source On-Resistance : RDS(on) ≤ 550mΩ@VGS= 10V ·Fast Sw

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HFA1412 NOT RECOMMENDED FOR NEW DESIGNS NO RECOMMENDED REPLACEMENT contact our Technical Support Center at 1-888-INTERSIL or www.intersil.com/tsc Qu

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Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA14N60P IXFP14N60P IXFH14N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA

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PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz www.DataSheet

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