CAPACITORS March 2018 MLCC with dipped radial lea.
Rohm
IA6008-FA22A - Color image sensor heads
IA6008-FA22A Contact image sensor heads Color image sensor heads for multi-function IA6008-FA22A “Color contact image sensor” with optical system int.
SMC
VXFA22 - Direct Operated 3 Port Solenoid Valve
CAT.EUS70-26 A -UK Direct Operated 3 Port Solenoid Valve For Water, Oil, Steam, Air Reduction of power consumption (DC specification) 4.5 W 8 W 7 W.
Vishay
VS-HFA220FA120 - Ultrafast Soft Recovery Diode
www.vishay.com VS-HFA220FA120 Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 220 A SOT-227 FEATURES • Fast recovery time characteri.
Infineon
PTFA220041M - High Power RF LDMOS Field Effect Transistor
PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz Description The PTFA22.
Infineon
PTFA220081M - High Power RF LDMOS Field Effect Transistor
PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M .
INCHANGE
IIXFA22N65X2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFA22N65X2 IIXFA22N65X2 ·DESCRIPTION ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage .
IXYS
IXFA22N65X2 - Power MOSFET
X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA22N65X2 IXFP22N65X2 IXFH22N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM .
Panasonic
ELJFA220xF - Fixed Inductors
Fixed Inductors (Chip Inductors) 3. General use FC, FA, FB Japan China ■ Features General use wire wound and resin molded chip inductor. Corespond to.
Panasonic
ELJFA221xF - Fixed Inductors
Fixed Inductors (Chip Inductors) 3. General use FC, FA, FB Japan China ■ Features General use wire wound and resin molded chip inductor. Corespond to.
IXYS Corporation
IXFA22N60P3 - Power MOSFETs
Preliminary Technical Information Polar3TM HiperFETTM IXFA22N60P3 Power MOSFETs IXFP22N60P3 IXFQ22N60P3 N-Channel Enhancement Mode IXFH22N60P3 .
Wolfspeed
PTFA220121M - High Power RF LDMOS Field Effect Transistor
PTFA220121M High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET int.
TDK
FA22 - CAPACITORS
CAPACITORS March 2018 MLCC with dipped radial lead (Halogen-free, automotive grade, high temperature application) FA series (NP0, X8R) Type: Lead p.
INCHANGE
IXFA22N65X2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFA22N65X2 IIXFA22N65X2 ·DESCRIPTION ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage .
IXYS
IXFA220N06T3 - Power MOSFET
Advance Technical Information TrenchT3TM HiperFETTM Power MOSFET IXFA220N06T3 IXFP220N06T3 IXFH220N06T3 VDSS = ID25 = RDS(on) 60V 220A 4m N-Ch.
INCHANGE
IXFA220N06T3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXFA220N06T3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4mΩ@VGS=10V ·Fully characterized avalanche volt.