FA22 Datasheet | Specifications & PDF Download

CAPACITORS March 2018 MLCC with dipped radial lead (Halogen-free, automotive grade, high temperature application) FA series (NP0, X8R) Type: Lead p

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IA6008-FA22A Contact image sensor heads Color image sensor heads for multi-function IA6008-FA22A “Color contact image sensor” with optical system int

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Advance Technical Information TrenchT3TM HiperFETTM Power MOSFET IXFA220N06T3 IXFP220N06T3 IXFH220N06T3 VDSS = ID25 = RDS(on)  60V 220A 4m N-Ch

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CAT.EUS70-26 A -UK Direct Operated 3 Port Solenoid Valve For Water, Oil, Steam, Air Reduction of power consumption (DC specification) 4.5 W 8 W 7 W

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www.vishay.com VS-HFA220FA120 Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 220 A SOT-227 FEATURES • Fast recovery time characteri

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isc N-Channel MOSFET Transistor IXFA220N06T3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4mΩ@VGS=10V ·Fully characterized avalanche volt

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Fixed Inductors (Chip Inductors) 3. General use FC, FA, FB Japan China ■ Features General use wire wound and resin molded chip inductor. Corespond to

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Preliminary Technical Information Polar3TM HiperFETTM IXFA22N60P3 Power MOSFETs IXFP22N60P3 IXFQ22N60P3 N-Channel Enhancement Mode IXFH22N60P3

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFA22N65X2 IIXFA22N65X2 ·DESCRIPTION ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFA22N65X2 IIXFA22N65X2 ·DESCRIPTION ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage

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X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA22N65X2 IXFP22N65X2 IXFH22N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM

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Fixed Inductors (Chip Inductors) 3. General use FC, FA, FB Japan China ■ Features General use wire wound and resin molded chip inductor. Corespond to

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PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz Description The PTFA22

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PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M

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PTFA220121M High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET int

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