FGA Datasheet | Specifications & PDF Download

FGA60N65SMD — 650 V, 60 A Field Stop IGBT October 2013 FGA60N65SMD 650 V, 60 A Field Stop IGBT Features • Maximum Junction Temperature : TJ = • High

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FGA40N60UFD IGBT FGA40N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

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www.DataSheet4U.com FGA15N120ANTD 1200V NPT Trench IGBT May 2006 FGA15N120ANTD 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive tem

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FGA6560WDF — 650 V, 60 A Field Stop Trench IGBT FGA6560WDF 650 V, 60 A Field Stop Trench IGBT April 2015 Features • Maximum Junction Temperature :

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435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-300-3600 FGA10 InGaAs Photodiode --High Responsivity --Low Capacitance:

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Product Specification SPECIFICATION FOR APPROVAL www.gotolcd.com LC550DUE ( ) Preliminary Specification ( ● ) Final Specification Title BUYER MODEL

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Description Mitsubishi microcomputers M16C / 62A Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M16C/62A group of single-chip microcomp

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Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an

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www.DataSheet4U.com FGA25N120AN IGBT FGA25N120AN General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conductio

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www.DataSheet4U.com FGA15N120AND IGBT FGA15N120AND General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduc

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FGA90N33AT 330V, 90A PDP Trench IGBT FGA90N33AT 330V, 90A PDP Trench IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.1V

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FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

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FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT FGA6530WDF 650 V, 30 A Field Stop Trench IGBT August 2015 Features • Maximum Junction Temperature :

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FGA70N33BTD 330V, 70A PDP IGBT FGA70N33BTD 330V, 70A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.7V @ IC = 70A

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FGA25S125P — 1250 V, 25 A Shorted-anode IGBT FGA25S125P 1250 V, 25 A Shorted-anode IGBT February 2016 Features • High Speed Switching • Low Saturat

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FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT April 2013 FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Features • Field Stop Trench Technolog

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FGA20S120M 1200 V, 20 A Shorted-anode IGBT March 2013 FGA20S120M 1200 V, 20 A Shorted-anode IGBT Features • High Speed Switching • Low Saturation V

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FGA5065ADF — 650 V, 50 A Field Stop Trench IGBT FGA5065ADF 650 V, 50 A Field Stop Trench IGBT August 2015 Features • Maximum Junction Temperature :

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435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 FGA04 InGaAs Photodiode High Responsivity Low Capacitance: High Speed Fiber Compatible with FC Con

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