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IPA70R360P7S MOSFET 700V CoolMOSª P7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the su

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OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) prod

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IPT007N06N MOSFET OptiMOSTM Power-Transistor, 60 V Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according t

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IKW50N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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Version 2.1, 30 Aug 2011 ® Never stop thinking. ICE3BR4765JZ Revision History: 2011-8-30 Previous Version: V2.0 Page 27 Subjects (major changes

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IPD70R600P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N120R3 Data sheet Industrial Power Control IHW20N120R3 Resonant Sw

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IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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AUTOMOTIVE GRADE   AUIRFP4568 Features  Advanced Planar Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature 

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SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD. FM6124 (：S&CIC1501) 16 LED FM6124 LED IC， 16 。FM6124 “ ”，，。FM6124 ， 。 FM6124 ， PCB 。 ， LED 。

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Machine Translated by Google Shenzhen Fuman Electronics Group Co., Ltd. SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. IC LTH7R. (File No.: S&CIC1

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IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW30N60H3 600V high speed switching se

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching ser

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CoolMOSTM Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qua

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Datasheet,Version 2.5, July 4, 2011 ® ICE2QR0665 Off-Line SMPS Quasi-Resonant PWM Controller with integrated 650V CoolMOS® and startup cell in DIP-8

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SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate

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CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qual

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