G02 Datasheet | Specifications & PDF Download

BTR04G02/BTR06G02 Low Capacitance Single-Line ESD Suppressor FEATURES  0402 or 0603 Package  Protect I/O lines etc.  Low Clamping Voltage 

(75 views)

Primary lithium batteries G 06/2 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability AA - size spiral cell Benefits • High and stab

(28 views)

HYG025N06LS1D Single N-Channel Enhancement Mode MOSFET Feature Pin Description  60V/160A RDS(ON)= 2.6 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ

(28 views)

Description AP15G02DF 20V N+P-Channel Enhancement Mode MOSFET The AP15G02DF uses advanced trench technology to provide excellent RDS(ON), low gate c

(25 views)

G025N03T N-Channel Enhancement Mode Power MOSFET Description The G025N03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

(24 views)

Description AP20G02CDF 20V N+P-Channel Enhancement Mode MOSFET The AP20G02CDF uses advanced trench technology to provide excellent RDS(ON), low gate

(24 views)

Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM (2-Wire) BR24G02-3 General Description BR24G02-3 is a 2Kbit serial EEPROM of I2C BUS

(23 views)

G020N03D5 N-Channel Enhancement Mode Power MOSFET Description The G020N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate

(23 views)

G020N03T N-Channel Enhancement Mode Power MOSFET Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

(23 views)

74AUP2G02 Low-power dual 2-input NOR gate Rev. 9 — 27 July 2021 Product data sheet 1. General description The 74AUP2G02 is a dual 2-input NOR gate.

(22 views)

G020N03D5 N-Channel Enhancement Mode Power MOSFET Description The G020N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate

(22 views)

PRODUCT SPECIFICATION Doc. Number: DN0382923 □ Tentative Specification □ Preliminary Specification ■ Approval Specification MODEL NO.: N070ICE-G02(C3)

(21 views)

AP60G02NF 20V N+P-Channel Enhancement Mode MOSFET Description The AP60G02NF uses advanced trench technology to provide excellent RDS(ON), low gate cha

(19 views)

www.vishay.com SiHG026N65E Vishay Siliconix E Series Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(o

(19 views)

Description AP20G02BDF 20V N+P-Channel Enhancement Mode MOSFET The AP20G02BDF uses advanced Trench III technology to provide excellent RDS(ON), low

(18 views)

AP6G02LI 20V N+P-Channel Enhancement Mode MOSFET Description The AP6G02LI uses advanced trench technology to provide excellent RDS(ON), low gate charg

(18 views)

TENTATIVE All information in this technical data sheet is tentative and subject to change without notice. 10.4” SVGA TECHNICAL SPECIFICATION AA104SG

(17 views)

Datasheet R9A02G021 32-Bit MCU based on RISC-V R01DS0422EJ0110 Rev.1.10 Feb 29, 2024 Ultra low power 48 MHz Renesas RISC-V core with 128-KB code fl

(17 views)

INTEGRATED CIRCUITS DATA SHEET 74AUC1G02 Single 2-input NOR gate Preliminary specification File under Integrated Circuits, IC24 2002 Nov 12 Philips

(16 views)

UNISONIC TECHNOLOGIES CO., LTD U74LVC2G02 DUAL 2-INPUT POSITIVE-NOR GATE „ DESCRIPTION CMOS IC The UTC U74LVC2G02 is a dual 2-input positive-NOR gat

(16 views)