G02 Datasheet | Specifications & PDF Download

RECORDS OF REVISION ‚l‚n‚c‚d‚k ‚m‚•F SPEC No. LCY-03072 Date 2003. 6. 4 LQ070Y5DG02 NO. PAGE SUMMARY NOTE 1st Issue NOTICE This publication is the pr

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HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanc

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PRODUCT SPECIFICATION Doc. Number: DN0382923 □ Tentative Specification □ Preliminary Specification ■ Approval Specification MODEL NO.: N070ICE-G02(C3)

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Primary lithium batteries G 06/2 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability AA - size spiral cell Benefits • High and stab

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UNISONIC TECHNOLOGIES CO., LTD U74LVC1G02 SINGLE 2-INPUT NOR GATE  DESCRIPTION The U74LVC1G02 is a 2-input NOR gate device which provides the Functi

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TENTATIVE All information in this technical data sheet is tentative and subject to change without notice. 10.4” SVGA TECHNICAL SPECIFICATION AA104SG

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NL17SG02 Single 2-Input NOR Gate The NL17SG02 MiniGatet is an advanced high−speed CMOS 2−input NOR gate in ultra−small footprint. The NL17SG02 input

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HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanc

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HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala

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HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala

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HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc

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HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc

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Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L NTBG028N170M1 Features • Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (typ. QG

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Product Specification G128240x02 series Crystal Clear Technology sdn. bhd. 16Jalan TP5—Taman Perindustrian Sime UEP 47600 Subang Jaya—Selangor DE Mala

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INTEGRATED CIRCUITS DATA SHEET 74AUC1G02 Single 2-input NOR gate Preliminary specification File under Integrated Circuits, IC24 2002 Nov 12 Philips

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www.DataSheet4U.com VG025 Product Features • Tunable within 50 – 2200 MHz • 21 dB Attenuation Range The Communications Edge TM Product Information

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74AUP2G02 Low-power dual 2-input NOR gate Rev. 7 — 4 February 2013 Product data sheet 1. General description The 74AUP2G02 provides a dual 2-input N

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2KG023075JL 2KG023075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG023075JL is a high speed switching diode chip fabricated in planar technology. Ø Ø This

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2KG028075YQ 2KG028075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075YQ is a high speed switching diode chip fabricated in planar technology. Ø Ø This

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