BTR04G02/BTR06G02 Low Capacitance Single-Line ESD Suppressor FEATURES  0402 or 0603 Package  Protect I/O lines etc.  Low Clamping Voltage 

PowerModule MG020201 DIPパッケージ タイプ インバータ サーボアンプ Feature SmallDIPPackage IsolatedPackag HighVoltage HighHeatDissipation Application Inverter

HYG025N06LS1D Single N-Channel Enhancement Mode MOSFET Feature Pin Description  60V/160A RDS(ON)= 2.6 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ

SPI NAND XT26G02C XT26G02C 3.3V 2G-BIT SPI NAND FLASH MEMORY Future routine revisions will occur when appropriate, without notice. Contact XTX TECH

G020N03T N-Channel Enhancement Mode Power MOSFET Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

Description AP8G02LI 20V N+P-Channel Enhancement Mode MOSFET The AP8G02LI uses advanced trench technology to provide excellent RDS(ON), low gate cha

Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM (2-Wire) BR24G02-3 General Description BR24G02-3 is a 2Kbit serial EEPROM of I2C BUS

G025N03T N-Channel Enhancement Mode Power MOSFET Description The G025N03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

BTR04G02/BTR06G02 Low Capacitance Single-Line ESD Suppressor FEATURES  0402 or 0603 Package  Protect I/O lines etc.  Low Clamping Voltage 

HYG025N04NA1C2 Single N-Channel Enhancement Mode MOSFET Feature  40V/190A RDS(ON)= 1.4mΩ(typ.) @VGS = 10V  100% Avalanche Tested  Reliable and Rug

For DATAAPUArUOoMPOdT2ROu0OC1NcDI7tCoUS1SnC2LpOfi2RedIP2cnOeRit0nfAei8tTcrIi:Oaa5nNlt4aio:l3Un6se OnlyG190EG02 V1 ((MMVood)d)euPFCllrieNeunlsaaitmmlo

74HC2G02-Q100; 74HCT2G02-Q100 Dual 2-input NOR gate Rev. 2 — 26 July 2018 Product data sheet 1. General description The 74HC2G02-Q100; 74HCT2G02-Q10

HYG023N04NR1D Single N-Channel Enhancement Mode MOSFET Feature  45V/140A RDS(ON)= 2.3 mΩ(typ.) @VGS = 10V  100% Avalanche Tested  Reliable and Ru

Primary lithium batteries G 06/2 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability AA - size spiral cell Benefits • High and stab

HYG025N06LS1C2 Single N-Channel Enhancement Mode MOSFET Feature  60V/170A RDS(ON)= 2.1 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.2 mΩ (typ.) @ VGS = 4.5V 

HYG028N10NS1B6 N-Channel Enhancement Mode MOSFET Feature  100V/230A RDS(ON)=2.4mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged

HYG028N10NS1P/B Feature  100V/230A RDS(ON)=2.6mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avai

HYG020N06LS1P/B Microelectronics N-Channel Enhancement Mode MOSFET Feature  60V/250A RDS(ON)= 2 mΩ(typ.) @VGS = 10V RDS(ON)= 2.5 mΩ(typ.) @VGS = 4

12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 123456789