HYG023N03LR1C2
HUAYI
760.43kb
N-channel mosfet.
TAGS
📁 Related Datasheet
HYG023N03LR1D - N-Channel Enhancement Mode MOSFET
(HUAYI)
HYG023N03LR1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V
100% Avalanc.
HYG023N03LR1U - N-Channel Enhancement Mode MOSFET
(HUAYI)
HYG023N03LR1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V
100% Avalanc.
HYG023N03LR1V - N-Channel Enhancement Mode MOSFET
(HUAYI)
HYG023N03LR1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V
100% Avalanc.
HYG022N03LQ1D - N-Channel MOSFET
(HUAYI)
HYG022N03LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V
z 100% Avala.
HYG022N03LQ1U - N-Channel MOSFET
(HUAYI)
HYG022N03LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V
z 100% Avala.
HYG022N03LQ1V - N-Channel MOSFET
(HUAYI)
HYG022N03LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V
z 100% Avala.
HYG025N04LQ1D - N-Channel MOSFET
(HUAYI)
HYG025N04LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V
100% Avalanc.
HYG025N04LQ1U - N-Channel MOSFET
(HUAYI)
HYG025N04LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V
100% Avalanc.
HYG025N04LQ1V - N-Channel MOSFET
(HUAYI)
HYG025N04LQ1D/U/V
N-Channel Enhancement Mode MOSFET
Feature
40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V
100% Avalanc.
HYG025N04NA1C2 - Single N-Channel Enhancement Mode MOSFET
(ChipSourceTek)
HYG025N04NA1C2
Single N-Channel Enhancement Mode MOSFET
Feature
40V/190A RDS(ON)= 1.4mΩ(typ.) @VGS = 10V
100% Avalanche Tested Reliable and Rug.