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HYG023N04LS1B - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HYG023N04LS1B, a member of the HYG023N04LS1P N-Channel Enhancement Mode MOSFET family.

Description

TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G023N04 XYMXXXXXX B G023N04 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation fi

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Datasheet Details

Part number HYG023N04LS1B
Manufacturer HOOYI
File Size 1.31 MB
Description N-Channel Enhancement Mode MOSFET
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HYG023N04LS1P/B N-Channel Enhancement Mode MOSFET Feature  40V/170A RDS(ON)= 2.1 mΩ (typ.) @VGS = 10V RDS(ON)= 2.9 mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Management for DC/DC Pin Description TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G023N04 XYMXXXXXX B G023N04 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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