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HYG023N04NR1D - N-Channel Enhancement Mode MOSFET

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S GD Applications Load Switch Battery Protection Single N-Channel MOSFET Ordering and Marking Information D G023N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNa

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Part number HYG023N04NR1D
Manufacturer HOOYI
File Size 1.38 MB
Description N-Channel Enhancement Mode MOSFET
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HYG023N04NR1D Single N-Channel Enhancement Mode MOSFET Feature  45V/140A RDS(ON)= 2.3 mΩ(typ.) @VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description S GD Applications  Load Switch  Battery Protection Single N-Channel MOSFET Ordering and Marking Information D G023N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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