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HYG023N03LR1V - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HYG023N03LR1V, a member of the HYG023N03LR1D N-Channel Enhancement Mode MOSFET family.

Description

GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information N-Channel MOSFET D G023N03 XYWXXXXXX U G023N03 XYWXXXXXX V G023N03 XYWXXXXXX Package Code D: TO-252-2L U: TO-251-3

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Datasheet Details

Part number HYG023N03LR1V
Manufacturer HUAYI
File Size 903.06 KB
Description N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription

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HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information N-Channel MOSFET D G023N03 XYWXXXXXX U G023N03 XYWXXXXXX V G023N03 XYWXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYWXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
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