| Part number | HYG023N03LR1V, HYG023N03LR1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 903.06 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
 HYG023N03LR1D-HUAYI.pdf
|
| Note |
This datasheet PDF includes multiple part numbers: HYG023N03LR1V, HYG023N03LR1D. Please refer to the document for exact specifications by model. |
GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information N-Channel MOSFET D G023N03 XYWXXXXXX U G023N03 XYWXXXXXX V G023N03 XYWXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYWXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.HUAYI
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