HYG023N03LR1V, HYG023N03LR1D N-Channel Enhancement Mode MOSFET

HUAYI

Description

HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET .
GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications. Switching Application. Power Management for DC/DC. Battery Protection Or.

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HYG023N03LR1V Datasheet Preview — This datasheet PDF includes multiple part numbers: HYG023N03LR1V, HYG023N03LR1D. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HYG023N03LR1V, HYG023N03LR1D
Manufacturer: HUAYI
File Size: 903.06 KB
Datasheet: HYG023N03LR1D-HUAYI.pdf
Description: N-Channel Enhancement Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: HYG023N03LR1V, HYG023N03LR1D.
Please refer to the document for exact specifications by model.

Applications

* Switching Application
* Power Management for DC/DC
* Battery Protection Ordering and Marking Information N-Channel MOSFET D G023N03 XYWXXXXXX U G023N03 XYWXXXXXX V G023N03 XYWXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYWXXXXXX Note: HUAYI lead-free prod

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HYG023N03LR1D N-Channel Enhancement Mode MOSFET HUAYI

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