Datasheet4U Logo Datasheet4U.com

HYG028N10NS1B - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HYG028N10NS1B, a member of the HYG028N10NS1P N-Channel Enhancement Mode MOSFET family.

Description

TO-220FB-3L TO-263-2L Ordering and Marking Information P G028N10 XYMXXXXXX B G028N10 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B :TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish

📥 Download Datasheet

Datasheet preview – HYG028N10NS1B

Datasheet Details

Part number HYG028N10NS1B
Manufacturer HOOYI
File Size 1.41 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG028N10NS1B Datasheet
Additional preview pages of the HYG028N10NS1B datasheet.

📁 Similar Datasheet

Other Datasheets by HOOYI

Full PDF Text Transcription

Click to expand full text
HYG028N10NS1P/B Feature  100V/230A RDS(ON)=2.6mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Uninterruptible Power Supply  Motor Control N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Ordering and Marking Information P G028N10 XYMXXXXXX B G028N10 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B :TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
Published: |