HYG025N04NA1C2 Datasheet, Mosfet, ChipSourceTek

PDF File Details

Part number:

HYG025N04NA1C2

Manufacturer:

ChipSourceTek

File Size:

1.34MB

Download:

📄 Datasheet

Description:

Single n-channel enhancement mode mosfet. DDDD DDDD k Applications e

  • Load Switch T
  • Lithium battery protect board SSSG GSSS PDFN8L(5x6) urce Orderi

  • Datasheet Preview: HYG025N04NA1C2 📥 Download PDF (1.34MB)
    Page 2 of HYG025N04NA1C2 Page 3 of HYG025N04NA1C2

    HYG025N04NA1C2 Application

    • Applications e
    • Load Switch T
    • Lithium battery protect board SSSG GSSS PDFN8L(5x6) urce Ordering and Marking Information Sin

    TAGS

    HYG025N04NA1C2
    Single
    N-Channel
    Enhancement
    Mode
    MOSFET
    ChipSourceTek

    📁 Related Datasheet

    HYG025N04LQ1D - N-Channel MOSFET (HUAYI)
    HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc.

    HYG025N04LQ1U - N-Channel MOSFET (HUAYI)
    HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc.

    HYG025N04LQ1V - N-Channel MOSFET (HUAYI)
    HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc.

    HYG025N06LS1D - N-Channel Power MOSFET (ChipSourceTek)
    HYG025N06LS1D Single N-Channel Enhancement Mode MOSFET Feature Pin Description  60V/160A RDS(ON)= 2.6 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ.

    HYG022N03LQ1D - N-Channel MOSFET (HUAYI)
    HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.

    HYG022N03LQ1U - N-Channel MOSFET (HUAYI)
    HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.

    HYG022N03LQ1V - N-Channel MOSFET (HUAYI)
    HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.

    HYG023N03LR1C2 - N-Channel MOSFET (HUAYI)
    HYG023N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/125A RDS(ON)= 1.5mΩ (typ.) @VGS = 10V RDS(ON)= 2.1mΩ (typ.) @VGS =.

    HYG023N03LR1D - N-Channel Enhancement Mode MOSFET (HUAYI)
    HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanc.

    HYG023N03LR1U - N-Channel Enhancement Mode MOSFET (HUAYI)
    HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanc.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts