HYG025N04LQ1D Datasheet, Mosfet, HUAYI

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Part number:

HYG025N04LQ1D

Manufacturer:

HUAYI

File Size:

804.59kb

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📄 Datasheet

Description:

N-channel mosfet. GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications

Switching Application

Power Management for DC/DC

HYG025N04LQ1D Application

• Applications
• Switching Application
• Power Management for DC/DC
• Battery Protection Ordering and Marking Information N-

TAGS

HYG025N04LQ1D

HUAYI

📁 Related Datasheet

HYG025N04LQ1U - N-Channel MOSFET (HUAYI)
HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc.

HYG025N04LQ1V - N-Channel MOSFET (HUAYI)
HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanc.

HYG025N04NA1C2 - Single N-Channel Enhancement Mode MOSFET (ChipSourceTek)
HYG025N04NA1C2 Single N-Channel Enhancement Mode MOSFET Feature  40V/190A RDS(ON)= 1.4mΩ(typ.) @VGS = 10V  100% Avalanche Tested  Reliable and Rug.

HYG025N06LS1D - N-Channel Power MOSFET (ChipSourceTek)
HYG025N06LS1D Single N-Channel Enhancement Mode MOSFET Feature Pin Description  60V/160A RDS(ON)= 2.6 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ.

HYG022N03LQ1D - N-Channel MOSFET (HUAYI)
HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.

HYG022N03LQ1U - N-Channel MOSFET (HUAYI)
HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.

HYG022N03LQ1V - N-Channel MOSFET (HUAYI)
HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avala.

HYG023N03LR1C2 - N-Channel MOSFET (HUAYI)
HYG023N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/125A RDS(ON)= 1.5mΩ (typ.) @VGS = 10V RDS(ON)= 2.1mΩ (typ.) @VGS =.

HYG023N03LR1D - N-Channel Enhancement Mode MOSFET (HUAYI)
HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanc.

HYG023N03LR1U - N-Channel Enhancement Mode MOSFET (HUAYI)
HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature  30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V  100% Avalanc.