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HYG025N04LQ1U - N-Channel MOSFET

This page provides the datasheet information for the HYG025N04LQ1U, a member of the HYG025N04LQ1D N-Channel MOSFET family.

Description

GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information N-Channel MOSFET D G025N04 XYMXXXXXX U G025N04 XYMXXXXXX V G025N04 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3

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Datasheet Details

Part number HYG025N04LQ1U
Manufacturer HUAYI
File Size 804.59 KB
Description N-Channel MOSFET
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HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information N-Channel MOSFET D G025N04 XYMXXXXXX U G025N04 XYMXXXXXX V G025N04 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L Date Code XYMXXXXXX V:TO-251-3S Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
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