G04 Datasheet | Specifications & PDF Download

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L NTBG045N065SC1 Features • Typ. RDS(on) = 31 mW @ VG

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This is the PDF file of catalog No.C02E-6 CHIP MONOLITHIC CERAMIC CAPACITOR High-power Type GRM600 Series C02E6.pdf 00.7.18 s Features 1. Mobile Tel

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Single Inverter NLV74HC1G04 The NLV4HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. The internal circuit is compose

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M3S, D2PAK-7L Product Preview NTBG040N120M3S Features • Typ. RDS(on) = 40

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Specification for 4.2 inch EPD Model NO. : MT-DEPG0420BNS830F0 This module uses ROHS material DATE: CUSTOMER APPROVED BY Tel: 1 (888) 499-8477 Fax

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N567GXXX Table of Contents 1. GENERAL DESCRIPTION

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, D2PAK-7L NVBG040N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID

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Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L NVBG040N120M3S Features • Typ. RDS(on) = 40 mW @ VGS = 18 V • Ultra Low Gate C

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LSC04N70A/LSD04N70A/LSG04N70A/LSH04N70A LonFET Lonten N-channel 700V, 4A, 0.96Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated

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PL IA NT Features ■ RoHS compliant* ■ ESD protection >25 kV ■ Low capacitance <0.5 pF ■ Low leakage current <50 nA Applications ■ HDMI 1.4 ■ Digital

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SVA-NEC Confidential SN-SA-A0003-02-E 1/36 Shanghai SVA - NEC Liquid Crystal Display Co., Ltd. TFT COLOR LCD MODULE （ COMMON） SVA150XG04TB 38cm (15.0

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HYG042N10NS1P/B Feature  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

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SPECIFICATION FOR LCM MODULE MODULE NO.: ABC008002G04-YAN-R-01 DOC. REVISION 00 Customer Approval: PREPARED BY (RD ENGINEER) PREPARED BY (QA ENGINEER

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CED14G04/CEU14G04 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 40V, 125A, RDS(ON) = 3.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @V

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