G04 Datasheet | Specifications & PDF Download

G040P04M P-Channel Enhancement Mode Power MOSFET Description The G040P04M uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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□ Preliminary Specification ■ Final Specification Module Model Name 4.3 Inch Color TFT-LCD G043FW01 V0 G043FW01 V0 Customer Date Approved by Da

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Primary lithium batteries G 04/3 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability 1 /2 AA - size spiral cell Benefits • High and

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G040P04M P-Channel Enhancement Mode Power MOSFET Description The G040P04M uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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CUSTOMER APPROVAL SHEET Company Name MODEL CUSTOMER APPROVED G043FTT01.0 Title : Name : □ APPROVAL FOR SPECIFICATIONS AND CS SAMPLE (Spec. Ver. 1.

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LSC04N70A/LSD04N70A/LSG04N70A/LSH04N70A LonFET Lonten N-channel 700V, 4A, 0.96Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID MAX 60

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HYG045P03LQ1C2 Single P-Channel Enhancement Mode MOSFET Feature Description  -30V/-80A RDS(ON)= 3.8 mΩ (typ.) @VGS = -10V RDS(ON)= 6.2 mΩ (typ.) @V

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SVA-NEC Confidential SN-SA-A0003-02-E 1/36 Shanghai SVA - NEC Liquid Crystal Display Co., Ltd. TFT COLOR LCD MODULE （ COMMON） SVA150XG04TB 38cm (15.0

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Caution 1. This Kyocera LCD module has been specifically designed for use only in electronic devices in the areas of audio control, office automation,

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L NTBG045N065SC1 Features • Typ. RDS(on) = 31 mW @ VG

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This is the PDF file of catalog No.C02E-6 CHIP MONOLITHIC CERAMIC CAPACITOR High-power Type GRM600 Series C02E6.pdf 00.7.18 s Features 1. Mobile Tel

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, D2PAK-7L NVBG040N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V ID

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Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L NVBG040N120M3S Features • Typ. RDS(on) = 40 mW @ VGS = 18 V • Ultra Low Gate C

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sales.Mr.wang13826508770 www.sztssd.com Description AP6G04S 40V N+P-Channel Enhancement Mode MOSFET The AP6G04S uses advanced trench technology to

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Specification for 4.2 inch EPD Model NO. : MT-DEPG0420BNS830F0 This module uses ROHS material DATE: CUSTOMER APPROVED BY Tel: 1 (888) 499-8477 Fax

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