NTBG045N065SC1 SiC MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L NTBG045N065SC1 .

📥 Download Datasheet

NTBG045N065SC1 Datasheet Preview — Preview of NTBG045N065SC1 PDF

Datasheet Specifications

Part number: NTBG045N065SC1
Manufacturer: ON Semiconductor ↗
File Size: 317.95 KB
Datasheet: NTBG045N065SC1-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 31 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 105 nC)
* Low Effective Output Capacitance (Coss = 168 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant wit

Applications

* SMPS (Switching Mode Power Supplies)
* Solar Inverters
* UPS (Uninterruptable Powere Supplies)
* Energy Storages MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source

NTBG045N065SC1 Distributors

📁 Related Datasheet

NTB0101 NTB0101A NTB0102 NTB0102-Q100 NTB0104 NTB0104-Q100

📌 All Tags

NTBG045N065SC1 SiC MOSFET ON Semiconductor

ON Semiconductor NTBG045N065SC1-like datasheet