NTBG045N065SC1 - SiC MOSFET
NTBG045N065SC1 Features
* Typ. RDS(on) = 31 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 105 nC)
* Low Effective Output Capacitance (Coss = 168 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant wit
