NTBG045N065SC1 Datasheet - ON Semiconductor

NTBG045N065SC1, SiC MOSFET

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L NTBG045N065SC1 .

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Datasheet Details

Part number:

NTBG045N065SC1

Manufacturer:

ON Semiconductor ↗

File Size:

317.95 KB

Description:

SiC MOSFET

Features

* Typ. RDS(on) = 31 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 105 nC)
* Low Effective Output Capacitance (Coss = 168 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant wit

Applications

* SMPS (Switching Mode Power Supplies)
* Solar Inverters
* UPS (Uninterruptable Powere Supplies)
* Energy Storages MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source

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