NTBG040N120SC1 - SiC MOSFET
NTBG040N120SC1 Features
* Typ. RDS(on) = 40 mW
* Ultra Low Gate Charge (Typ. QG(tot) = 106 nC)
* Low Effective Output Capacitance (Typ. Coss = 139 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
* Free 2LI (
