NTBG040N120SC1 Datasheet, Mosfet, ON Semiconductor

NTBG040N120SC1 Features

  • Mosfet
  • Typ. RDS(on) = 40 mW
  • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC)
  • Low Effective Output Capacitance (Typ. Coss = 139 pF)
  • 100% Avalanche Tested

PDF File Details

Part number:

NTBG040N120SC1

Manufacturer:

ON Semiconductor ↗

File Size:

325.92kb

Download:

📄 Datasheet

Description:

Sic mosfet.

Datasheet Preview: NTBG040N120SC1 📥 Download PDF (325.92kb)
Page 2 of NTBG040N120SC1 Page 3 of NTBG040N120SC1

NTBG040N120SC1 Application

  • Applications
  • UPS
  • DC-DC Converter
  • Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol

TAGS

NTBG040N120SC1
SiC
MOSFET
ON Semiconductor

📁 Related Datasheet

NTBG040N120M3S - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M3S, D2PAK-7L Product Preview NTBG040N120M3S Features • Typ. RDS(on) = 40 .

NTBG045N065SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L NTBG045N065SC1 Features • Typ. RDS(on) = 31 mW @ VG.

NTBG014N120M3P - SiC MOSFET (ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L NTBG014N120M3P Features • Typ. RDS(on) = 14 mW • Low Switching Losses (Typ. .

NTBG015N065SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L NTBG015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS.

NTBG020N090SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L NTBG020N090SC1 Features • Typ. RDS(on) = 20 mW @ VG.

NTBG020N120SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L NTBG020N120SC1 Features • Typ. RDS(on) = 20 mW • Ul.

NTBG025N065SC1 - SiC MOSFET (ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L NTBG025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 m.

NTBG028N170M1 - SiC MOSFET (ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L NTBG028N170M1 Features • Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (typ. QG.

NTBG060N065SC1 - SiC MOSFET (ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L NTBG060N065SC1 Features • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 m.

NTBG060N090SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L NTBG060N090SC1 Features • Typ. RDS(on) = 60 mW @ VG.

Stock and price

part
onsemi
SICFET N-CH 1200V 60A D2PAK-7
DigiKey
NTBG040N120SC1
845 In Stock
Qty : 100 units
Unit Price : $12.93
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts