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NTBG040N120SC1 Datasheet - ON Semiconductor

NTBG040N120SC1 SiC MOSFET

NTBG040N120SC1 Features

* Typ. RDS(on) = 40 mW

* Ultra Low Gate Charge (Typ. QG(tot) = 106 nC)

* Low Effective Output Capacitance (Typ. Coss = 139 pF)

* 100% Avalanche Tested

* TJ = 175°C

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

* Free 2LI (

NTBG040N120SC1 Datasheet (325.92 KB)

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Datasheet Details

Part number:

NTBG040N120SC1

Manufacturer:

ON Semiconductor ↗

File Size:

325.92 KB

Description:

Sic mosfet.

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