G26 Datasheet | Specifications & PDF Download

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A5G26H605W19N Airfast RF Power GaN Transistor Rev. 1 — 21 December 2023 This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellul

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www.DataSheet4U.com VIS Description VG26(V)(S)17400D 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 wor

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Global Mixed-mode Technology G2620 High Efficiency, Constant Current 36V, 1A LED Driver with Internal Switch Feature Operating Voltage: 7V to 36V

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Primary lithium batteries G 26 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability D - size spiral cell Benefits • High and stable

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White Electronic Designs W3EG264M72AFSRxxxD3 ADVANCED* 1GB – 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL, FBGA FEATURES Double-data-rate architecture DD

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Type SXR Radial Leaded Capacitors { Low Impedance { Low ESR GENERAL SPECIFICATIONS { High Ripple { Long Life { 2000 Hour Load Life For Dia ͨ 8mm; 30

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NXP Semiconductors Technical Data Document Number: A3G26H502W17S Rev. 1, 01/2021 RF Power GaN Transistor This 80 W asymmetrical Doherty RF power Ga

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www.DataSheet4U.com VIS Description VG26(V)(S)17400D 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 wor

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White Electronic Designs WV3EG264M64EFSU-D4 PRELIMINARY* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES PC2700 @ CL2.5 Double-data-rate architecture B

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White Electronic Designs WV3HG264M64EEU-D4 ADVANCED* 1GB – 2x64Mx64 DDR2 SDRAM UNBUFFERED FEATURES 200-pin, dual in-line memory module (SO-DIMM) Fas

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TABLE OF CONTENTS Description of Terminology…………………………………………………………………………………2 Structural Drawing …………………………………………………………………………………………2 Reliability Test

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Global Mixed-mode Technology G2621 High Efficiency, Constant Current 40V White-LEDs Driver Feature „ Operating Voltage: 2.5V to 5.5V. „ High Opera

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AFSC5G26E39 Airfast Power Amplifier Module Rev. 2 — 14 June 2024 Product data sheet 1 General description The AFSC5G26E39 is a fully integrated Dohe

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LMG2610 SNOSDE2A – OCTOBER 2022 – REVISED DECEMBER 2022 LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1 Features • 650

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Ultra-Fast-Recovery Rectifier Diodes 600V VRM (V) Package Part Number I F (AV) (A) 30.0 0.5 0.5 0.6 1.0 1.0 1.2 2.0 1.0 (2.0) 3.0 4.0 5.0 5.0 IFSM (A)

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www.DataSheet4U.com VIS Description VG26(V)(S)17405FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 4,194,304 words

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FMG21S thru FMG26S Pb Free Plating Product Pb FMG21S/FMG22S/FMG23S/FMG24S/FMG25S/FMG26S 10 Amperes Insulated Dual Common Cathode Ultra Fast Recovery

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Global Mixed-mode Technology Inc. G2602 High Voltage Multi-Topology LED Driver Features „ High Voltage : VIN up to 36V, VOUT up to 36V „ 1.5A Switc

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LED Lamp GL6EG26T/GL6EG27T GL6EG26T/GL6EG27T s Outline Dimensions (Unit : mm) 5.8 4.6mm, Oval Type(with Tie-bar), Colored/Colorless Transparency, W

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