G2B Datasheet | Specifications & PDF Download

UG2A THRU UG2D ULTRAFAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts DO-204AC Forward Current - 2.0 Amperes FEATURES ♦ Plastic pack

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Type DCMC 85 °C High Capacitance, Screw Terminal, Aluminum Highest Capacitance Screw Terminal Type With more capacitance and often more ripple-current

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ESMT Flash FEATURES  Single-level cell (SLC) technology  Organization - Page size x1: 2176 bytes (2048 + 128 bytes) - Block size: 64 pages (128K + 8

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1 HY27UF(08/16)2G2B Series 2Gbit (256Mx8bit) NAND Flash 2Gb NAND FLASH HY27UF(08/16)2G2B This document is a general product description and is subje

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ESMT F59L2G81XA (2B) Flash FEATURES  Voltage Supply: 3.3V (2.7V to 3.6V)  Open NAND Flash Interface (ONFI) 1.0-compliant1  Single-level cell (SLC

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VISHAY Standard Sinterglass Diode G2A / B / D / G / J / K / M Vishay Semiconductors Features • High temperature metallurgically bonded constructed r

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ESMT Flash FEATURES  Single-level cell (SLC) technology  Organization - Page size x1: 2176 bytes (2048 + 128 bytes) - Block size: 64 pages (128K + 8

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DATA SHEET SEMICONDUCTOR GPP SURFACE MOUNT RECTIFIER VOLTAGE- 50 to 1000 Volts CURRENT - 2.0 Amperes G2 A THRU G2 M SMF Unit: inch ( mm ) 0.110(2.80

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() CRJQ125N65G2BF SJMOS N-MOSFET 650V, 103mΩ, 27A Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficienc

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ESMT DDR3 SDRAM Feature z Interface and Power Supply „ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) z JEDEC DDR3 Compliant „ 8n Prefetch Architecture „ Different

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ESMT DDR3 SDRAM Feature z Interface and Power Supply „ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) z JEDEC DDR3 Compliant „ 8n Prefetch Architecture „ Different

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CRJQ74N60G2BF () SJMOS N-MOSFET 600V, 70mΩ, 39A Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficiency

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resistors RS73 high reliability chip resistors NEW features EU • Metal-glaze thick film resistor for surface mounting • High precision resistor w

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ESMT F59L2G81XA (2B) Flash FEATURES  Voltage Supply: 3.3V (2.7V to 3.6V)  Open NAND Flash Interface (ONFI) 1.0-compliant1  Single-level cell (SLC

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Free Datasheet http://www.Datasheet4U.com Caution 1. This Kyocera LCD module has been specifically designed for use only in electronic devices in the

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Type DCMC 85 °C High Capacitance, Screw Terminal, Aluminum Highest Capacitance Screw Terminal Type With more capacitance and often more ripple-current

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() CRJQ140N65G2BF SJMOS N-MOSFET 650V, 110mΩ, 25A Features Product Summary • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for

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Photointerrupters(Reflective) SG-2BC DIMENSIONS The SG-2BC reflective sensor combines a GaAs IRED with a high-sensitivity phototransistor in a super-

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1 HY27UF(08/16)4G2B Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF(08/16)4G2B www.DataSheet4U.com This document is a general product desc

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Data Sheet Rev.1.0 28.11.2013 4096MB DDR3 – SDRAM ECC SO-DIMM 204 Pin ECC SO-UDIMM SGN04G72G2BQ2SA-xx(E/W)RT 4GByte in FBGA Technology RoHS complia

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