G3S Datasheet | Specifications & PDF Download

Miniature SOP6-pin type with high capacity of 3.3A load current HE SOP 1 Form A High Capacity (AQV25❍G3S) 6.3 .248 4.4 .173 2.1 .083 mm inch 16 2

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G3SBA20 and G3SBA80 Case Type GBU Glass Passivated Single-Phase New Product Bridge Rectifier Reverse Voltage 200 and 800 V Forward Current 4.0 A Fea

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AUTOMOTIVE RELAYS Twin Relays EN2/EP2 Series Single Relays EP1/MR301 Series JC–13003D (5th edition) August 1995 M Printed in Japan © 1992 DESCRIPT

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Solid State Relay G3S/G3SD Ultra-small Relay Breaks up to 1 A • Ultra-small, dual in-line package (DIP) SSR. • Terminals compatible with G6B Electrom

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AUTOMOTIVE RELAYS Twin Relays EN2/EP2 Series Single Relays EP1/MR301 Series JC–13003D (5th edition) August 1995 M Printed in Japan © 1992 DESCRIPT

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AUTOMOTIVE RELAYS Twin Relays EN2/EP2 Series Single Relays EP1/MR301 Series JC–13003D (5th edition) August 1995 M Printed in Japan © 1992 DESCRIPT

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Miniature SOP6-pin type with high capacity of 3.3A load current HE SOP 1 Form A High Capacity (AQV25❍G3S) 6.3 .248 4.4 .173 2.1 .083 mm inch 16 2

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Datasheet V2021.A.0 G3S17050PM 1700V/ 50A Silicon Carbide Power Schottky Barrier Diode Features • Zero reverse recovery current • Zero forward recove

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Miniature SOP6-pin type with high capacity of 3.3A load current HE SOP 1 Form A High Capacity (AQV25❍G3S) 6.3 .248 4.4 .173 2.1 .083 mm inch 16 2

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TH58BYG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BYG3S0HBAI4 is a si

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AUTOMOTIVE RELAYS Twin Relays EN2/EP2 Series Single Relays EP1/MR301 Series JC–13003D (5th edition) August 1995 M Printed in Japan © 1992 DESCRIPT

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AUTOMOTIVE RELAYS Twin Relays EN2/EP2 Series Single Relays EP1/MR301 Series JC–13003D (5th edition) August 1995 M Printed in Japan © 1992 DESCRIPT

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Datasheet V2020.A.1 G3S06520B 650V/20A Silicon Carbide Power Schottky Barrier Diode Features • Zero reverse recovery current • Zero forward recovery

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Datasheet V2020.A.1 G3S06505R 650V/5A Silicon Carbide Power Schottky Barrier Diode Features • Zero reverse recovery current • Zero forward recovery v

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DATASHEET UG3SC120009K4S CASE JG (4) CASE D (1) Silicon Carbide (SiC) Combo JFET - EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 7.6 mohm Rev. C,

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Solid State Relay G3S/G3SD Ultra-small Relay Breaks up to 1 A • Ultra-small, dual in-line package (DIP) SSR. • Terminals compatible with G6B Electrom

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AUTOMOTIVE RELAYS Twin Relays EN2/EP2 Series Single Relays EP1/MR301 Series JC–13003D (5th edition) August 1995 M Printed in Japan © 1992 DESCRIPT

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TH58BVG3S0HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BVG3S0HTA00 is a si

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TH58BVG3S0HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BVG3S0HTAI0 is a si

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TH58NVG3S0HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G  8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG3S0HTAI0 is a si

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