GHV-10 Datasheet | Specifications & PDF Download

CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

Rating: 1 ★ (4 votes)

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CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron M

Rating: 1 ★ (3 votes)

CGHV96100F2 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Wolfspeed’s CGHV96100F2 is a gallium nitride (GaN) High Electron M

Rating: 1 ★ (3 votes)

CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transist

Rating: 1 ★ (3 votes)

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Rating: 1 ★ (2 votes)

CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe

Rating: 1 ★ (2 votes)

CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is d

Rating: 1 ★ (2 votes)

CGHV96100F2 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN Amplifier Description The CGHV96100F2 is a gallium nitride (GaN) amplifier. This Ga

Rating: 1 ★ (2 votes)