GP-20B Datasheet | Specifications & PDF Download

PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability •

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PD - 94626 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE www.datasheet4u.com IRGP20B60PD C Applications • • • • Telecom and Server

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Preliminary Technical Information GenX3TM 1200V IGBT IXGA20N120B3 IXGP20N120B3 VCES = 1200V IC90 = 20A VCE(sat) ≤ 3.1V High Speed Low Vsat PT IGBT

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DATA SHEET GPCL A1/B1 Series Low Power Sound Controller Series Sep 15, 2015 Version 1.0 GENERALPLUS TECHNOLOGY INC. reserves the right to change this

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Datasheet V2020.A.1 G3S06520B 650V/20A Silicon Carbide Power Schottky Barrier Diode Features • Zero reverse recovery current • Zero forward recovery

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www.DataSheet4U.com PD - 95602 IRGP20B120UD-EP • Lead-Free www.irf.com 1 7/28/04 IRGP20B120UD-EP 2 www.irf.com IRGP20B120UD-EP www.irf.com

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EGP20AH THRU EGP20MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes

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TYPICAL PERFORMANCE CURVES ® APT1452G0P01V20B2DQ2(G) APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS

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EGP20A THRU EGP20M SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes PA

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PD - 94626 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C IRGP20B60PD VCES = 600V VCE(on) typ. = 2.05V @ VGE = 15V IC = 13.0A App

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High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 Preliminary Data Sheet VCES IC25 VCE(sat) tfi(typ) = 1200 V = 40 A = 3.4 V = 160 ns Symbol

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HiPerFASTTM IGBT IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE(sat) tfi(typ)

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SMPS IGBT PD - 95558 IRGP20B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE www.datasheet4u.com • • • • • • • • • • • • Applications

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AP09N20BGP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristics ▼

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Not for New Designs EGP20A, EGP20B, EGP20C, EGP20D, EGP20F, EGP20G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic

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PD- 93817 IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast Non Punch Through (NPT) Technology

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Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 RGP20A thru RGP20J Vishay General Semiconductor Glass Passivated Juncti

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DATA SHEET www.onsemi.com Rectifiers, High Efficiency, Glass Passivated, 2.0 A EGP20A - EGP20K Features  Glass−Passivated Cavity−Free Junction  Hi

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GP20A - GP20M AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 2.0 A Features Diffused Junction Low Forward Voltage Drop

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HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE(sat) = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol www.DataSheet4U.com

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