Inchange Semiconductor
MJH11017 - Silicon PNP Darlington Power Transistor
isc Silicon PNP Darlington Power Transistor
MJH11017
DESCRIPTION ·High DC Current Gain-
: hFE = 400(Min)@ IC= -10A ·Collector-Emitter Sustaining Vol
(13 views)
Pulse
H1101 - (H11xx) 10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS
10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS
With Various Turns Ratios
RoHS-5 peak reflow temperature rating 235°C RoHS-6 peak reflow temperature
(13 views)
Pulse
H1101NL - 10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS
10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS
With Various Turns Ratios
RoHS peak reflow temperature rating: 245°C°° Meets IEEE 802.3 specification
(11 views)
NXP
NT3H1101 - Energy harvesting NFC Forum Type 2 Tag
NT3H1101/NT3H1201
NTAG I2C - Energy harvesting NFC Forum Type 2 Tag with field detection pin and I2C interface
Rev. 3.3 — 15 July 2015 265433
Produ
(11 views)
ON
MJH11017 - Complementary Darlington Silicon Power Transistors
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
Complementary Darlington Silicon Power Transistors
These devices are designed f
(10 views)
ON
MJH11019 - Complementary Darlington Silicon Power Transistors
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
Complementary Darlington Silicon Power Transistors
These devices are designed f
(10 views)
Texas Instruments
TPS7H1101-SP - LDO Regulator
Product Folder
Order Now
Technical Documents
Tools & Software
Support & Community
TPS7H1101-SP
SLVSD81A – JANUARY 2016 – REVISED FEBRUARY 2017
TP
(10 views)
Motorola
MJH11017 - 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJH11017/D
MJH10012 (See MJ10012)
Complementary Darlington Silicon Power Transistors
(8 views)
SINO WEALTH
SH1101A - 132 x 64 Dot Matrix OLED/PLED Segment/Common Driver
SH1101A
132 X 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller
Features
Support maximum 132 X 64 dot matrix panel Embedded 132 X 64 bit
(8 views)
Fairchild Semiconductor
FJH1101 - Ultra Low Leakage Diode
(7 views)
Motorola
MJH11019 - 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJH11017/D
MJH10012 (See MJ10012)
Complementary Darlington Silicon Power Transistors
(7 views)
Inchange Semiconductor
MJH11018 - Silicon NPN Power Transistor
isc Silicon NPN Darlington Power Transistor
MJH11018
DESCRIPTION ·High DC Current Gain-
: hFE = 400(Min)@ IC= 10A ·Collector-Emitter Sustaining Volt
(6 views)
INCHANGE
MJH11012 - NPN Transistor
isc Silicon NPN Darlington Power Transistor
MJH11012
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 60V(Min.) ·High DC Current Gain-
:
(6 views)
ELAN Microelectronics
ePH1101 - Handwriting Recognition Microcontroller
ePH1101
Handwriting Recognition Microcontroller
Product Specification
DOC. VERSION 2.1
ELAN MICROELECTRONICS CORP.
February 2006
Trademark Acknowledg
(5 views)
ON
MJH11018 - Complementary Darlington Silicon Power Transistors
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
Complementary Darlington Silicon Power Transistors
These devices are designed f
(4 views)
Motorola
MJH11018 - 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJH11017/D
MJH10012 (See MJ10012)
Complementary Darlington Silicon Power Transistors
(3 views)
