HA-460 Datasheet | Specifications & PDF Download

MT4606 September 2008 MT4606 Dual N & P-Channel PowerTrench MOSFET General Description These dual N- and P-Channel enhancement mode power field ef

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MUR440, MUR460 Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time •

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 MT4600 Dual N & P-Channel Po werTrench® MOSFET Features • N-Channel 30V/5A, RDS (ON) = 28mΩ (max.) @ VGS =4.5V RDS (ON) = 38mΩ (max.) @ VGS =

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P ro du ct O ve rvi ew , DS 2, D ec . 20 02 TE 3- F A L C P EF 3 46 0 E , V e r s io n 1 .2 T3 /E 3 Fr a m er & L i n e In te r f ac e f o r A T M ,

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MIC4609 600V 3-Phase MOSFET/IGBT Driver Features • Gate Drive Supply Voltage up to 20V • Overcurrent Protection with Programmable Restart Delay • 1A

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www.vishay.com IRFP460 Vishay Siliconix Power MOSFET TO-247 D S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (max.) (nC) Qg

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DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, DFN5/DFNW5 40 V, 4.5 mW, 78 A V(BR)DSS 40 V RDS(ON) MAX 4.5 mW @ 10 V 7.2 mW @ 4.5 V I

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AO4604 Complementary Enhancement Mode Field Effect Transistor General Description The AO4604 uses advanced trench technology MOSFETs to provide excel

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 MT4607 Dual N & P-Channel Po werTrench® MOSFET  Features General Description These dual N and P-Channel enhancement mode power field effe

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Alfa-MOS Technology General Description AFC4606WS, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), l

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MIC4608 600V Half Bridge MOSFET or IGBT Driver General Description The MIC4608 is a 600V Half Bridge IGBT or MOSFET driver. The MIC4608 features a 45

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PCA9460 13-channel power management integrated circuit (PMIC) for ultra-low power applications Rev. 3.4 — 10 January 2024 Product data sheet 1 Ge

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2SK3460 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 150 +20, –10 ± 18 ± 72 35 (Tc = 25ºC) 180 18 150 –5

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07  P & N-Channel 100-V(D-S) MOSFET ‹ DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures min

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http://www.ncepower.com Pb Free Product NCE4606A N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606A uses advanced trench technol

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MIC4604 85V Half Bridge MOSFET Drivers with up to 16V Programmable Gate Drive General Description The MIC4604 is an 85V Half Bridge MOSFET driver. Th

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AO4600 Complementary Enhancement Mode Field Effect Transistor General Description The AO4600 uses advanced trench technology to provide excellent R DS

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NTTFS5C460NL MOSFET – Power, Single, N-Channel 40 V, 4.8 mW, 74 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Mini

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GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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