HA-460 Datasheet | Specifications & PDF Download

AO4604 Complementary Enhancement Mode Field Effect Transistor General Description The AO4604 uses advanced trench technology MOSFETs to provide excel

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SMK0460F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage : BVDSS=600V(Min.) Low Crss : Crss=9.8pF(Typ.) Low

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP460 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·St

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AO4606 30V Complementary MOSFET General Description The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate char

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP460A ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching

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Features ·Low On resistance. ·+4.5V drive. ·RoHS compliant. Si460N6+P Complementary Enhancement MOSFET Si4606 Package Dimensions Specifications Abs

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IRFP460 Data Sheet July 1999 File Number 2291.3 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

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AO4600 Complementary Enhancement Mode Field Effect Transistor General Description The AO4600 uses advanced trench technology to provide excellent R DS

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 500V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·Minim

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N-Channel Enhancement Mode Power MOSFET Description The PE8460K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c

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STC4606 N&P Pair Enhancement Mode MOSFET 6.5A / -6.9A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor usi

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AO4607 Complementary Enhancement Mode Field Effect Transistor General Description The AO4607 uses advanced trench technology MOSFETs to provide excell

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P0460AS / P0460AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2Ω @VGS = 10V ID 4A TO-263 TO-220 ABSOLUTE MAXIMUM

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE -TO-3 (TO-204AE) Product Summary Part Number BVDSS IRF460 500V RDS(on) ID 0.

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p-channel JFET designed for. • • • Amplifiers • Analog Switches ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Drain-Gate or Source-Gate Vo

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Alfa-MOS Technology AFN4608S 60V N-Channel Enhancement Mode MOSFET General Description AFN4608S, N-Channel enhancement mode MOSFET, uses Advanced Tr

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP460LC FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Vo

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IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Q

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P0460EDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2.5Ω @VGS = 10V ID 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 2

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High Sensitivity Latching Digital Hall-effect Sensor ICs: 32312441 SS360NT, SS360ST, SS360ST-10K, SS460S, SS460S-T2, SS460S-T3 Issue F SS460S-LP F

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