HI-6010 GENERAL DESCRIPTION The HI-6010 is a CMOS .
ChipSourceTek
PT6010 - lithium-ion/lithium-polymer battery protection
8～10 / PT6010 PT6010 PT6010 8～10 / ： 、， ： ，，/ VCOV = 4.25V/3.85V/3.65V/2.80V 。 ：±25mV ： ±25mV VCOVR = 4.15V/3.65V/3.55V/2.5V 。±10.
Vishay
V60100C-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V60100C-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TM.
Mitsubishi
M66010FP - 24-BIT I/O EXPANDER
MITSUBISHI MITSUBISHI 〈DIGITAL 〈DIGITAL ASSP ASSP 〉 〉 M66010FP/GP M66010FP/GP 24-BIT I/O EXPANDER 24-BIT I/O EXPANDER DESCRIPTION M66010 Semiconduct.
Hitachi Semiconductor
HA166008MP - (HA166008MP - HA166010MP) READ/ WRITE CIRCUIT
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Hitachi Semiconductor
HA166010MP - (HA166008MP - HA166010MP) READ/ WRITE CIRCUIT
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Vishay Siliconix
V60100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V60100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS .
Comchip
MBR6050PT-G - (MBR6050PT-G - MBR60100PT-G) Schottky Barrier Rectifier
Schottky Barrier Rectifier MBR6050PT-G Thru. MBR60100PT-G Reverse Voltage: 50 to 100V Forward Current: 60.0A RoHS Device Features -Metal of silicon r.
AnaSem
VDA6010NTA - High detect accuracy CMOS Voltage Detector
AnaSem Analog Semiconductor IC VDA Series Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector (IMPORTANT: Please check the last .
Holt Integrated Circuits
HI-6010 - ARINC 429 TRANSMITTER/RECEIVER FOR 8 BIT BUS
HI-6010 GENERAL DESCRIPTION The HI-6010 is a CMOS integrated circuit designed to interface the avionics data bus standard ARINC 429 to an 8 bit port. .AN6010 - High Efficiency PWM Step-Down DC/DC Converter
AN6010 1.5MHz, 1.5A, High Efficiency PWM Step-Down DC/DC Converter GeneCroalnDveesrcterirption: AN6010 is a high efficiency step-down DC/DC converte.
Ruichips
RUH60100R - N-Channel Advanced Power MOSFET
RUH60100R N-Channel Advanced Power MOSFET Features • 60V/100A, RDS (ON) =3.3mΩ(Typ.)@VGS=10V RDS (ON) =4.3mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance.
Sharp Electrionic Components
SM6010 - 16-Bit Single- Chip Microcomputer
PRODUCT INFORMATION ® APPLICATIONS: • Pager • PDA • Digital Camera Integrated Circuits Group SM6010 16-Bit SingleChip Microcomputer FEATURES • CPU –.
Advanced Power Technology
APT6010JLL - Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both .
HITANO
CSM6010 - Wire Wound Power Inductor
Data Sheet Customer: Product: Wire Wound Power Inductor (Shielded) – CSM Series Size : 2012/2410/2412/3010/3012/4010/4012/4018/5010/5012/.
Vishay Siliconix
MBR60100CT - Dual High-Voltage Schottky Rectifiers
www.vishay.com MBR60100CT Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier TO-220AB PIN 1 PIN 3 1 23 PIN 2 CASE .
ON
NCN6010 - SIM Card Supply and Level Shifter
NCN6010 MPU or GSM Controller C8 C4 I/O CLK Vpp RST GND VCC DET DET SIM Card Supply and Level Shifter The NCN6010 is a level shifter analog circuit .
Ruichips
RU60100R - N-Channel Advanced Power MOSFET
RU60100R N-Channel Advanced Power MOSFET Features • 60V/130A, RDS (ON) =4mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability .
Ruichips
RU60101R - N-Channel Advanced Power MOSFET
RU60101R N-Channel Advanced Power MOSFET MOSFET Features • 60V/100A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist.
Hitachi Semiconductor
HA166009MP - (HA166008MP - HA166010MP) READ/ WRITE CIRCUIT
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