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HOOYI HY1 Datasheet, Features, Application

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HOOYI
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HY1707 - N-Channel MOSFET

HY1707P Features • 70V/80A, RDS(ON)= 6mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compl.
HOOYI
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HY1707P - N-Channel MOSFET

HY1707P Features • 70V/80A, RDS(ON)= 6mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compl.
HOOYI
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HY1403 - N-Channel MOSFET

HY1403D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.
HOOYI
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HY1607 - N-Channel MOSFET

HY1607D/U/V N-Channel Enhancement Mode MOSFET Features • 68V/70A RDS(ON) = 6.8 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • L.
HOOYI
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HY1906B - N-Channel Enhancement Mode MOSFET

HY1906P/B N-Channel Enhancement Mode MOSFET Features • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugge.
HOOYI
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HY1908PM - N-Channel Enhancement Mode MOSFET

HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.
HOOYI
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HY1808AP - N-Channel MOSFET

HY1808AP/M/B/PS/PM Features • 80V/84A RDS(ON)= 6.2mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available.
HOOYI
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HY1001P - N-Channel Enhancement Mode MOSFET

HY1001M/P N-Channel Enhancement Mode MOSFET Features • 70V/75A, RDS(ON)=7.8mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free a.
HOOYI
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HY1808W - N-Channel MOSFET

HY1808P/W N-Channel Enhancement Mode MOSFET Features • 75V/85A, RDS(ON)= 8 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free .
HOOYI
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HY1804 - N-Channel MOSFET

HY1804D/U/S Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source .
HOOYI
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HY1808P - N-Channel MOSFET

HY1808P N-Channel Enhancement Mode MOSFET Features • 75V/85A, RDS(ON)= 8 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free an.
HOOYI
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HY1607A - N-Channel MOSFET

HY1607AP/M/B/MF/PS/PM Features • 68V/80A R = 6.5m(typ.) @ V =10V DS(ON) GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Gre.
HOOYI
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HY1906P - N-Channel Enhancement Mode MOSFET

HY1906P N-Channel Enhancement Mode MOSFET Features • • • • 65V/130A RDS(ON) = 7.5 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested G Reli.
HOOYI
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HY1606AP - N-Channel Enhancement Mode MOSFET

HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free .
HOOYI
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HY1707PM - N-Channel MOSFET

HY1707P/M/B/I/MF/PS/PM Features • 70V/80A, RDS(ON)= 6mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Availa.
HOOYI
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HY1710 - N-Channel MOSFET

HY1710P/M/B Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate.
HOOYI
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HY1620P - N-Channel Enhancement Mode MOSFET

HY1620P/B N-Channel Enhancement Mode MOSFET Features • 200V/60 A RDS(ON) = 32 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.
HOOYI
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HY1908D - N-Channel Enhancement Mode MOSFET

HY1908D/U/S N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)=7.8 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • .
HOOYI
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HY1603 - N-Channel MOSFET

HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.
HOOYI
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HY1904V - N-Channel Enhancement Mode MOSFET

HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugge.
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