HY1906P Datasheet, mosfet equivalent, HOOYI

HY1906P Features

• Mosfet
• 65V/130A RDS(ON) = 7.5 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested G Reliable and Rugged Lead Free and Green Devices Available (

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Part number:

HY1906P

Manufacturer:

HOOYI

File Size:

2.20MB

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📄 Datasheet

Description:

N-channel enhancement mode mosfet. 100% avalanche tested G Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D S D Applications G

HY1906P Application

• Applications G
• Switching application Power Management for Inverter Systems. S N-Channel MOSFET Ordering and Marking Informat

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HY1906P

HOOYI

📁 Related Datasheet

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HY1904V - N-Channel Enhancement Mode MOSFET (HOOYI)
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HY1908M - N-Channel Enhancement Mode MOSFET (HOOYI)
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