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HY1906P - N-Channel Enhancement Mode MOSFET

HY1906P Description

HY1906P N-Channel Enhancement Mode MOSFET .
100% avalanche tested G Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D S D Applications G. Swi.

HY1906P Applications

* G
* Switching application Power Management for Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code P HY1906 G ΓΏ YYWWJ P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/

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Datasheet Details

Part number
HY1906P
Manufacturer
HOOYI
File Size
2.20 MB
Datasheet
HY1906P-HOOYI.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET HOOYI
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