HY1904U Datasheet, Mosfet, HOOYI

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Part number:

HY1904U

Manufacturer:

HOOYI

File Size:

1.34MB

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📄 Datasheet

Description:

N-channel enhancement mode mosfet.

40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V

100% Avalanche Tested

Reliable a

HY1904U Application

• Applications
• Power Management for Inverter Systems Ordering and Marking Information N-Channel MOSFET DU HY1904 HY1904 YYXXXJWW G YYXXXJ

TAGS

HY1904U

HOOYI

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HY1904C2 Single N-Channel Enhancement Mode MOSFET Feature Description  40V/65A RDS(ON)= 5.1mΩ(typ.)@VGS = 10V RDS(ON)= 6.2mΩ(typ.)@VGS = 4.5V  100.

HY1904D - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugge.

HY1904V - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugge.

HY1906B - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1906P/B N-Channel Enhancement Mode MOSFET Features • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugge.

HY1906C2 - Single N-Channel Enhancement Mode MOSFET (HUAYI)
HY1906C2 Single N-Channel Enhancement Mode MOSFET Feature  60V/70A RDS(ON)= 5.7 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  .

HY1906P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1906P N-Channel Enhancement Mode MOSFET Features • • • • 65V/130A RDS(ON) = 7.5 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested G Reli.

HY1908B - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.

HY1908D - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1908D/U/S N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)=7.8 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • .

HY1908M - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.

HY1908MF - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.