PD-97309B HTA-SERIES HIGH RELIABILITY DC-DC CONVE.
HTA2003R3S - HIGH RELIABILITY DC-DC CONVERTER
PD-97309B HTA-SERIES HIGH RELIABILITY DC-DC CONVERTER Description The HTA Series of DC-DC converters is a family of 20W, single and dual output, high.VS-50MT060WHTAPbF - IGBT MTP
www.vishay.com VS-50MT060WHTAPbF Vishay Semiconductors “Half Bridge” IGBT MTP (Warp Speed IGBT), 114 A MTP PRIMARY CHARACTERISTICS VCES VCE(on) t.TH58BVG3S0HTAI0 - 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
TH58BVG3S0HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BVG3S0HTAI0 is a si.TC58NVG2S0HTAI0 - 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
TC58NVG2S0HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S0HTAI0 is a .40MT120UHTA - NPT IGBT
Bulletin I27194 rev. A 01/06 HALF-BRIDGE IGBT MTP 40MT120UHA 40MT120UHTA UltraFast NPT IGBT Features • UltraFast Non Punch Through (NPT) Technolo.HTA100-S - Current Transducer HTA 100~1000-S
Current Transducer HTA 100..1000-S For the electronic measurement of DC, AC and pulsed currents, with a galvanic isolation between the primary (high p.HTA1000-S - Current Transducer HTA 100~1000-S
Current Transducer HTA 100..1000-S For the electronic measurement of DC, AC and pulsed currents, with a galvanic isolation between the primary (high p.HTA200-S - Current Transducer HTA 100~1000-S
Current Transducer HTA 100..1000-S For the electronic measurement of DC, AC and pulsed currents, with a galvanic isolation between the primary (high p.HTA300-S - Current Transducer HTA 100~1000-S
Current Transducer HTA 100..1000-S For the electronic measurement of DC, AC and pulsed currents, with a galvanic isolation between the primary (high p.HTA500-S - Current Transducer HTA 100~1000-S
Current Transducer HTA 100..1000-S For the electronic measurement of DC, AC and pulsed currents, with a galvanic isolation between the primary (high p.LHTAT - HIGH TEMPERATURE OSCILLATOR
HIGH TEMPERATURE OSCILLATOR Leaded High Temperature/High Shock LHTAT DESCRIPTION 320 kHz - 50 MHz An increasing number of high temperature applicat.TH58NVG4S0HTAK0 - 16G-BIT (2G x 8 BIT) CMOS NAND E2PROM
TH58NVG4S0HTAK0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG4S0HTAK0 is a .HTA55A160BW - 3 Quadrants TRIAC
HTA55A160BW HTA55A160BW 3 Quadrants TRIAC FEATURES Repetitive Peak Off-State Voltage : 1600V R.M.S On–State Current (IT(RMS) = 55A) Gate Trigge.MMBD4448HTA - Surface Mount Switching Diodes
Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Ultra-Small Surface Mount Package * Fast switching Speed * For General Purpose Switching .MMBD4448HTA - Plastic-Encapsulated Switching Diode
Elektronische Bauelemente MMBD4448HT Series Plastic-Encapsulated Switching Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fr.MMBD4448HTA - SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode MMBD4448HT/HTA/HTC/HTS SWITCHING DIODE FEATURES z Fast Switching.LHTAT3.3V - Crystal Clock Oscillator
ISSUE 1; January 2016 Description An increasing number of high temperature applications require the use of leaded (through hole) ceramic packaged osc.MMBD4448HTA - SURFACE MOUNT FAST SWITCHING DIODE
Features • Ultra-Small Surface Mount Package • Fast Switching Speed • For General Purpose Switching Applications • High Conductance • Lead Free/RoHS C.CHTA35 - (CHTA30 / CHTB35) Power Components
www.DataSheet4U.com POWER COMPONENTS Applications • Heat Regulation • Ovens • Coffee Makers • Cookers • Light Dimming • Control of Inductive Loads •.