.
Huajing
CS150N03 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr.
Huajing Microelectronics
CS630A4H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne.
Huajing
CS150N03A8 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d.
China Hua Jing Electronics
CD2003GP - FM/AM RADIO-IC
CD2003GP/GB FM/AM RADIO IC 1、 Overvie w The CD2003GP/GB is a monolithic IC designed for use as a FM/AM radio system. Combined with audio power amplifi.
Huajing Microelectronics
CD7388CZ - Automobile Amplifier
ഀݾԨা CD7388CZ 4u41W кׂູٟӖԨা 1ǃὖ ᴀ᭭⫼ೈ˖CD7388CZ CD7388 ᰃϔഫ⫼Ѣッ≑䷇ડⱘಯ BTL ߎⱘ AB ㉏ࡳ⥛ᬒ⬉DŽ ݊⡍⚍བϟ˖ Ɣ ࡳ⥛ߎ˄᳔ 4u41W/4ȍ˗4u25W/4ȍ @ 14.4Vˈ1kHzˈ10%˅ Ɣ ༅.
Huajing Microelectronics
CS50N20ANH - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS50N20 ANH ○R General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-.
Huajing Microelectronics
CS150N04A8 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d.
HUAYI
HYG023N03LR1D - N-Channel Enhancement Mode MOSFET
HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature 30V/110A RDS(ON)= 2.1mΩ(typ.)@VGS = 10V RDS(ON)= 2.7mΩ(typ.)@VGS = 4.5V 100% Avalanc.
HUAYI
HYG053N10NS1B - N-Channel MOSFET
HYG053N10NS1P/B Feature 100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoH.
SONG CHUAN
894-2AC1-F-C - Relay
894 FEATURES ◆ Large Contact gap 2A--UP 2mm, 2C-- 1.5mm。 ◆ Rating up to 12A/277VAC (2A) ◆ High dielectric strength ◆ Epoxy seal type and flux free. ◆ .
Huajing Microelectronics
CS830A4RD - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
Huajing Microelectronics
CS90N03B3 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS90N03 B3 ○R General Description： CS90N03 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
Fenghua Advanced Technology
0603xxxxxx - General High Frequency COG MLCC
www.DataSheet4U.com · ç » ª ¸ ß ¿ Æ Í¨ ÓРø ÍÆ ßC µG O Àà ¶² àÆ ã× ¬Ì ´´ Õµ ÉÈ çÆ Ý÷ GE NR EL AHI GH FRE QE UN CY C OG M LC C ³ß ´ç ¹æ ¸ñ ³ß ´ç Di m.
Xiamen Hualian Electronics
HPC3022 - (HPC3020 - HPC3052) Bi-directional Photo-Thyristor Output Optocoupler
www.DataSheet4U.com Xiamen Hualian Electronics Co. , Ltd. HPC3020 HPC3022 HPC3051 HPC3021 HPC3023.
huashan
H669A - NPN Silicon Transistor
www.DataSheet4U.com NPN SILICON TRANSISTOR ¶ÔÓ¦¹úÍâкŠ2SD669A ÉÇÍ·»ª µç×ÓÆ÷¼þ ÐÏÞ¹«Ë¾ H669A ¨€ ×÷µÍƹ¦ÂÊ·Å´ó¡£ Ö÷ÒªÓÃ; ¨€ ÍâÐÎ ¼ °Òý½Å Á ¨€ .
Huajing
CSC31101CP - Voice compression and expansion circuits
·Â絫¼ ˧¾ª» CSC31101CP ·Â絩À¹ÑôÒïÓ 1.ãµØÌëÓöÊŸ CSC31101CP¹ Ñ ô Ò ï Ó é ¿ » Ò Ç Ê Ôª ¹ Õ © À ë Ó õ Ë ¹ Ñ ô Ò ï Ó ÷ × Ð Ö ¸ ± è É È µ ° » ç µ þ É Þ.
Fenghua Advanced Technology
FNR-14K391 - ZINC OXIDE VARISTOR
FENGHUA ZINC OXIDE VARISTOR Fenghua (HK) Electronics Ltd. Unit 207, Fu Hang Industrial Building, No.1, Hok Yuen Street East, Hung Hom, Hong Kong Tel:.
Fenghua Advanced Technology
FNR-10K821 - ZINC OXIDE VARISTOR
FENGHUA ZINC OXIDE VARISTOR Fenghua (HK) Electronics Ltd. Unit 207, Fu Hang Industrial Building, No.1, Hok Yuen Street East, Hung Hom, Hong Kong Tel:.SP5718AP - High precision primary side feedback switching power supply chip
SP5718AP DATA SHEET SP5718AP ：V1.0 -1- SP5718AP 、 SP5718AP ， AC/DC 。SP5718AP 、， TL431。 ， CS Rs 。， 。，，。SP5718AP PFM ， PWM ，。 SP5718AP ，（OCP），.
