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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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ഀ‫ݾ‬Ԩা CD7388CZ 4u41W ୺к࿛ູٟ৑ׂӖԨা 1ǃὖ ᴀ᭭⫼ೈ˖CD7388CZ CD7388 ᰃϔഫ⫼Ѣッ≑䷇ડⱘಯ BTL ߎⱘ AB ㉏ࡳ⥛ᬒ໻⬉DŽ ݊⡍⚍བϟ˖ Ɣ ࡳ⥛ߎ࡯˄᳔໻ 4u41W/4ȍ˗4u25W/4ȍ @ 14.4Vˈ1kHzˈ10%˅ Ɣ ༅

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Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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CD2003GP/GB FM/AM RADIO IC 1、 Overvie w The CD2003GP/GB is a monolithic IC designed for use as a FM/AM radio system. Combined with audio power amplifi

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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P0080EAL Thru P3500ECL Thyristor Surge Suppressors Description Package: TO-92 Pxxx0EAL,Pxxx0EBL,Pxxx0ECL Series Thyristor Surge Suppressors protect

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P0080SA Thru P3500SC Thyristor Surge Suppressors Description Package: DO-214AA Pxxx0SA,PXXX0SB,PXXX0SC Series Thyristor Surge Suppressors protect

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Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

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P0080EAL Thru P3500ECL Thyristor Surge Suppressors Description Package: TO-92 Pxxx0EAL,Pxxx0EBL,Pxxx0ECL Series Thyristor Surge Suppressors protect

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P0080C2 Thru P0640C2 Thyristor Surge Suppressors Description Package DO-214AA/SMB P0080C2 Thyristor Surge Suppressors protect telecommunications e

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Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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P0080EAL Thru P3500ECL Thyristor Surge Suppressors Description Package: TO-92 Pxxx0EAL,Pxxx0EBL,Pxxx0ECL Series Thyristor Surge Suppressors protect

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SHENZHEN BOYECHUANGZHAN ELECTRONICS CO.,LTD KSD-9700 Series Thermal Protector Features or structure KSD-9700 series thermal protector consists of dish

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Silicon N-Channel Power MOSFET CS13J65 A0-G ○R General Description： CS13J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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HuaXin Micro-electronics Co., Ltd Phone: 0512-68256888 Email:h-sun@h-sun.com Url:www.china-chip.com -0.3~12 -0.3~Vcc+0.3 -0.3~Vcc+0.3 -40~125 -20~70

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CD2003GP/GB FM/AM RADIO IC 1、 Overvie w The CD2003GP/GB is a monolithic IC designed for use as a FM/AM radio system. Combined with audio power amplifi

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HuaXin Micro-electronics Co., Ltd HS8110 Phone: 0512-68256888 Email:h-sun@h-sun.com Url:www.china-chip.com Ver 1.0 1. HS8110 PC( ) PG HS8110 / P

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Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120

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SMF20N65-Z 650V N-Channel MOSFET ●Features： ■ 20.0A, 650V, RDS(on)(Typ) =380mΩ@VGS=10V ■ Low Gate Charge ■ Low Crss ■ 100% Avalanche Tested ■ Fast Sw

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