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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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ഀ‫ݾ‬Ԩা CD7388CZ 4u41W ୺к࿛ູٟ৑ׂӖԨা 1ǃὖ ᴀ᭭⫼ೈ˖CD7388CZ CD7388 ᰃϔഫ⫼Ѣッ≑䷇ડⱘಯ BTL ߎⱘ AB ㉏ࡳ⥛ᬒ໻⬉DŽ ݊⡍⚍བϟ˖ Ɣ ࡳ⥛ߎ࡯˄᳔໻ 4u41W/4ȍ˗4u25W/4ȍ @ 14.4Vˈ1kHzˈ10%˅ Ɣ ༅

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SHENZHEN BOYECHUANGZHAN ELECTRONICS CO.,LTD KSD-9700 Series Thermal Protector Features or structure KSD-9700 series thermal protector consists of dish

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CD2003GP/GB FM/AM RADIO IC 1、 Overvie w The CD2003GP/GB is a monolithic IC designed for use as a FM/AM radio system. Combined with audio power amplifi

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Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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Silicon N-Channel Power MOSFET CS13N50 A8R ○R General Description： CS13N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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Silicon N-Channel Power MOSFET CS13J65 A0-G ○R General Description： CS13J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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CD2003GP/GB FM/AM RADIO IC 1、 Overvie w The CD2003GP/GB is a monolithic IC designed for use as a FM/AM radio system. Combined with audio power amplifi

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Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

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HuaXin Micro-electronics Co., Ltd Phone: 0512-68256888 Email:h-sun@h-sun.com Url:www.china-chip.com -0.3~12 -0.3~Vcc+0.3 -0.3~Vcc+0.3 -40~125 -20~70

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14D High Temperture 125℃ Series Metal Oxide Varistors (MOV) Features ·Wide operating voltage (V1mA) range from 18V to 1800V ·Fast responding to tr

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Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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CD1619CB 1、 CD1619CB 、、。 ： ● ：VCC=3V ，FM：ICCQ=5.3mA；AM：ICCQ=3.4mA（） ● FM/AM ● ：VCC=6V，RL=8Ω，PO=500mW（） ● AFC ● RF AGC、IF AGC ● LED ● ● ：S

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www.DataSheet4U.com NPN SILICON TRANSISTOR ¶ÔÓ¦¹úÍâкŠ2SD669A ÉÇÍ·»ª µç×ÓÆ÷¼þ ÐÏÞ¹«Ë¾ H669A ¨€ ×÷µÍƹ¦ÂÊ·Å´ó¡£ Ö÷ÒªÓÃ; ¨€ ÍâÐÎ ¼ °Òý½Å Á ¨€

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HY3506P/B N-Channel Enhancement Mode MOSFET Features • 60V/190A RDS(ON) = 3.5 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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