.
Toshiba
16
MG50Q2YS91 - GTR Module Silicon N-Channel IGBT
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
Microsemi Corporation
16
APTGT300DH60G - IGBT Power Module
APTGT300DH60G Asymmetrical - Bridge Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 CR3 VCES = 600V IC = 300A @ Tc = 80°C Appli.
Microsemi Corporation
16
APTGT35H120T3G - IGBT Power Module
APTGT35H120T3G Full - Bridge Fast Trench + Field Stop IGBT® www.datasheet4u.com Power Module 13 14 VCES = 1200V IC = 35A @ Tc = 80°C Application • We.
Fuji
15
2MBI150SC-120 - IGBT MODULE
2MBI150SC-120 IGBT Module 1200V / 150A 2 in one-package Features · High speed switching · Voltage drive · Low inductance module structure Applicati.
Advanced Power Technology
15
APTGF50X60RTP3 - Input rectifier bridge Brake 3 Phase Bridge NPT IGBT Power Module
APTGF50X60RTP3 APTGF50X60BTP3 Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module • www.DataSheet4U.com VCES = 600V IC = 50A @ Tc .
Fuji Electric
14
2MBI100U4A-120 - IGBT MODULE
www.DataSheet4U.com SPECIFICATION Device Name Type Name Spec. No. : : : IGBT MODULE 2MBI100U4A-120 MS5F 6061 Mar. 09 ’05 Mar. 09 ’05 S.Miyashit.
Microsemi Corporation
14
APTGT300A170G - IGBT Power Module
APTGT300A170G Phase leg Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 VCES = 1700V IC = 300A @ Tc = 80°C Application • Weldin.
Microsemi Corporation
14
APTGT50A170TG - Power-Module IGBT
APTGT50A170TG Phase leg Trench + Field Stop IGBT® Power Module VBUS Q1 G1 NTC2 www.DataSheet4U.com VCES = 1700V IC = 50A @ Tc = 80°C Application • W.
Mitsubishi
14
CP10TD1-24A - IGBT MODULE
APPLICATION NOTE Pre. Apr. MITSUBISHI
Mitsubishi Electric Semiconductor
13
CM200DY-12H - IGBT Module
MITSUBISHI IGBT MODULES CM200DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H S C2E1 E2 C1 E2 G2 C K G1 E1 G S L R - M5 THD (3 TYP.) P.
Infineon
13
FS150R12KT4 - IGBT-Module
TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS150R12KT4 EconoPACK™3ModulmitTrench/FeldstoppIGBT4undEmittercontr.
Advanced Power Technology
13
APTGT100SK120T - IGBT Power Module
www.DataSheet4U.com APTGT100SK120T Buck chopper Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 NT C2 VCES = 1200V IC = 100A @ Tc = 80°C Appl.
Advanced Power Technology
13
APTGF100DU120T - Dual common source NPT IGBT Power Module
APTGF100DU120T Dual common source NPT IGBT Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application · AC Switches · Switched Mode Power Supplies · .
Semikron
13
SKD75GAL123D - Igbt Modules
Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Conditions 1) RGE = 20 k.
eupec
13
FP50R12KS4C - IGBT-Module
Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KS4C Elektrische Eigenschaften / Electrical properties Höchstzuläss.
Toshiba
12
MG200Q2YS40 - Silicon N Channel IGBT GTR Module
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High inp.
Fuji
12
2MBI100N-060 - IGBT MODULE
2MBI100N-060 600V / 100A 2 in one-package IGBT Module Features · High speed switching · Voltage drive · Low inductance module structure Application.
FE
12
2MBI450UE-120 - IGBT Module U-Series
www.DataSheet4U.com 2MBI450UE-120 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 1200V / 450.
Advanced Power Technology
12
APTGT100H120G - IGBT Power Module
www.DataSheet4U.com APTGT100H120G Full - Bridge Fast Trench + Field Stop IGBT® Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application • Welding .