INGAAS Datasheet | Specifications & PDF Download

MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT Features: • 24.5 dBm of Power at 18 GHz • 15 dB typical Small Signal Gain at 18 GHz • 45% typical P

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NEC's 1310 nm InGaAsP MQW FP TOSA NX7314UA FOR LONG HAUL 155 Mb/s APPLICATION FEATURES • OPTICAL OUTPUT POWER: Pf = 1.0 mW • LOW THRESHOLD CURRENT Ith

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PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response InGaAs P

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www.DataSheet4U.com NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN) FEATURES • HIGH OUTP

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InGaAs-PIN/Preamp Receiver FEATURES • Integrated Design Optimizes Performance at High Bit Rates up to 10 Gb/s applications. • -17 dBm Typical Sensitiv

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TZ7-99-460B(2/4) MITSUBISHI (OPTICAL DEVICES) FU-319SPP-CV6 InGaAs PD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-319SP

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www.DataSheet4U.com NEC's 1310 nm InGaAsP MQW DFB LASER DIODE NX8300BE-CC IN COAXIAL PACKAGE NX8300CE-CC FOR 2.5 Gb/s APPLICATION FEATURES • INTERNAL

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www.DataSheet4U.com NEC's 1310 nm InGaAsP MQW-DFB LASER DIODE NX8304BE-CC IN COAXIAL PACKAGE NX8304CE-CC FOR FIBER OPTIC COMMUNICATIONS FEATURES • IN

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InGaAs-PIN/Preamp Receiver FEATURES • Small Form Factor Package(GW): 9 pins coplanar • Integrated Design Optimizes Performance at Bit Rates up to 12.5

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PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response InGaAs P

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TZ7-99-408 (2/4) MITSUBISHI (OPTICAL DEVICES) FU-311SPP-CV4 InGaAs PD PREAMP MODULE FOR THE 1.31 µm AND 1.55 µm WAVELENGTH RANGE DESCRIPTION FU-311SP

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PRELIMINARY DATA SHEET NEC's 1310 nm InGaAsP MQW FP TOSA NX7315UA FOR 2.5 Gb/s INTRA-OFFICE APPLICATION FEATURES • OPTICAL OUTPUT POWER: Pf = 0.6 mW

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InGaAs-APD/Preamp Receiver FEATURES • Small Form Factor Package(GW): 9 pins coplanar • Integrated Design Optimizes Performance at Bit Rates up to 10.7

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