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MGFC4419G Datasheet - Mitsubishi

MGFC4419G InGaAs HEMT Chip

MGFC4419G Features

* (TARGET) Low noise figure NFmin,=0.5 dB (MAX.) High associated gain Gs=12.0 dB (MIN.) @ f=12GHz @ f=12GHz APPLICATION X to K band amplifiers. RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain volt

MGFC4419G_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

MGFC4419G

Manufacturer:

Mitsubishi

File Size:

51.71 KB

Description:

Ingaas hemt chip.

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MGFC4419G MGFC4419G InGaAs HEMT Chip Mitsubishi

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