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MGFC4419G - InGaAs HEMT Chip

Datasheet Summary

Description

The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers.

Features

  • (TARGET) Low noise figure NFmin,=0.5 dB (MAX. ) High associated gain Gs=12.0 dB (MIN. ) @ f=12GHz @ f=12GHz.

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Datasheet preview – MGFC4419G

Datasheet Details

Part number MGFC4419G
Manufacturer Mitsubishi
File Size 51.71 KB
Description InGaAs HEMT Chip
Datasheet download datasheet MGFC4419G Datasheet
Additional preview pages of the MGFC4419G datasheet.

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Full PDF Text Transcription

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MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGFC4419G InGaAs HEMT Chip OUTLINE DRAWING DESCRIPTION The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers. FEATURES (TARGET) Low noise figure NFmin,=0.5 dB (MAX.) High associated gain Gs=12.0 dB (MIN.) @ f=12GHz @ f=12GHz APPLICATION X to K band amplifiers.
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