MGFC4419G - InGaAs HEMT Chip

Mitsubishi

Datasheet Details

Part number	MGFC4419G
Manufacturer	Mitsubishi
File Size	51.71 KB
Description	InGaAs HEMT Chip
Datasheet	MGFC4419G_MitsubishiElectricSemiconductor.pdf

The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers.

(TARGET) Low noise figure NFmin,=0.5 dB (MAX. ) High associated gain Gs=12.0 dB (MIN. ) @ f=12GHz @ f=12GHz.

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Published: Apr 29, 2005 |