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MGFC4419G Datasheet - Mitsubishi

InGaAs HEMT Chip

MGFC4419G Features

* (TARGET) Low noise figure NFmin,=0.5 dB (MAX.) High associated gain Gs=12.0 dB (MIN.) @ f=12GHz @ f=12GHz APPLICATION X to K band amplifiers. RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain volt

MGFC4419G Datasheet (51.71 KB)

Preview of MGFC4419G PDF

Datasheet Details

Part number:

MGFC4419G

Manufacturer:

Mitsubishi

File Size:

51.71 KB

Description:

Ingaas hemt chip.
MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGFC4419G I.

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MGFC4419G InGaAs HEMT Chip Mitsubishi

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