IRF-46 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IRFP4668，IIRFP4668 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.7mΩ ·Enhancement mode: Vth =3.0 to 5.0 V

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4468，IIRFP4468 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.6mΩ ·Enhancement m

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP460 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·St

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PD- 91880 SMPS MOSFET IRFP460A HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed powe

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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Public IRFP4468PbF Final datasheet MOSFET StrongIRFET™ Power MOSFET, 100 V Features • High Efficiency Synchronous Rectification in SMPS • Uninterrup

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PD -97140 IRFP4668PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Spe

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP460A ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching

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Public IRFP4468PbF Final datasheet MOSFET StrongIRFET™ Power MOSFET, 100 V Features • High Efficiency Synchronous Rectification in SMPS • Uninterrup

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IRFP460 Data Sheet July 1999 File Number 2291.3 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

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Public IRFPW4468PbF Final datasheet MOSFET StrongIRFET™ Power MOSFET, 100 V Features • High Efficiency Synchronous Rectification in SMPS • Uninterru

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB7446，IIRFB7446 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.3mΩ ·Enhancement

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$GYDQFHG 3RZHU 026)(7 IRFP460 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE -TO-3 (TO-204AE) Product Summary Part Number BVDSS IRF460 500V RDS(on) ID 0.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFZ46N， IIRFZ46N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16.5mΩ ·Enhancement

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IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Q

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PD -97134 IRFP4468PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Spe

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isc N-Channel MOSFET Transistor IRFR4615, IIRFR4615 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤42mΩ ·Enhancement mode: ·100% avalanche te

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF462 DESCRIPTION ·Repetitive Avalanche Ratings ·Dynamic dv/dt Rat

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