IRF101 Datasheet | Specifications & PDF Download

SEMICONDUCTOR IRF1010 Series N-Channel Power MOSFET (84A, 60Volts) D D RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF1010 is a three

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanch

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AUTOMOTIVE GRADE PD - 95962 Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching R

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PD - 95444 Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switch

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PD - 97458 AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalan

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PD - 97458 AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalan

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High

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PD - 95361A IRF1010ZPbF IRF1010ZSPbF Features IRF1010ZLPbF l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le

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  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avala

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1018E， IIRF1018E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010N， IIRF1010N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement

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AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanch

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AUTOMOTIVE GRADE PD - 95962 Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching R

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010E， IIRF1010E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching G l Fully Avalanch

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AUTOMOTIVE GRADE PD - 95962 Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching R

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