.
International Rectifier
IRF1010E - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.
nELL
IRF1010 - N-Channel Power MOSFET
SEMICONDUCTOR IRF1010 Series N-Channel Power MOSFET (84A, 60Volts) D D RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF1010 is a three.
INCHANGE
IRF1018E - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1018E， IIRF1018E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement.
International Rectifier
IRF1010EPBF - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.
International Rectifier
IRF1010Z - AUTOMOTIVE MOSFET
PD - 94652A AUTOMOTIVE MOSFET IRF1010Z IRF1010ZS IRF1010ZL HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resi.
Infineon
AUIRF1010EZ - Power MOSFET
AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanch.
International Rectifier
IRF1010NPBF - Power MOSFET
PD - 94966 IRF1010NPbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature .
International Rectifier
IRF1018ESPbF - Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High .
INCHANGE
IRF1010ZS - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
INCHANGE
IRF1010NS - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
INCHANGE
IRF1010EZ - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRF1010EZ，IIRF1010EZ ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching .
Infineon
AUIRF1010EZS - Power MOSFET
AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanch.
International Rectifier
IRF1010ZPbF - Power MOSFET
PD - 95361A IRF1010ZPbF IRF1010ZSPbF Features IRF1010ZLPbF l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature .
INCHANGE
IRF1010N - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010N， IIRF1010N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement .
Infineon
AUIRF1010EZL - Power MOSFET
AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanch.
International Rectifier
IRF1010ES - Power MOSFET
PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operatin.
International Rectifier
IRF1010N - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching G l Fully Avalanch.
International Rectifier
IRF1010ZL - AUTOMOTIVE MOSFET
PD - 94652A AUTOMOTIVE MOSFET IRF1010Z IRF1010ZS IRF1010ZL HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resi.
International Rectifier
IRF1010ESPbF - HEXFET Power MOSFET
PD - 95444 Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switch.
International Rectifier
IRF1010EZLPbF - POWER MOSFET
www.DataSheet4U.com PD - 95483 AUTOMOTIVE MOSFET Features O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D Advanced P.